Junction Temperature ........................................................................................................................................ 150
Collector to Base Voltage .............................................................................................................................................. 40 V
V
CEO
Collector to Emitter Voltage........................................................................................................................................... 30 V
V
EBO
Emitter to Base Voltage ................................................................................................................................................... 5 V
I
C
Collector Current.................................................................................................................................................................. 3 A
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
40
30
5
-
-
-
-
30
160
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=2A, I
B
=200mA
I
C
=2A, I
B
=200mA
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
MHz
pF
Test Conditions
V
CE
=5V, I
C
=0.1A, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of h
FE2
Rank
Range
P
160-320
E
250-500
HSD882S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 2/5
Saturation Voltage & Collector Current
125 C
o
75 C
o
25 C
o
Saturation Voltage (mV)
75 C
100
o
hFE
100
25 C
o
hFE @ V
CE
=2V
10
1
10
100
1000
10000
10
1
125 C
V
CE(sat)
@ I
C
=10I
B
o
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
1000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
75 C
o
Saturation Voltage (mV)
75 C
o
100
125 C
o
100
25 C
o
125 C
o
25 C
o
V
CE(sat)
@ I
C
=40I
B
10
1
10
100
1000
10000
10
1
10
100
V
CE(sat)
@ I
C
=20I
B
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
100
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
75 C
1000
25 C
o
o
Capacitance (pF)
Cob
125 C
V
BE(sat)
@ I
C
=10I
B
100
1
10
100
1000
10000
10
0.1
1
10
100
o
Collector Current-I
C
(mA)
Reverse-Biased Voltage (V)
HSD882S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 3/5
Cutoff Frequency & Collector Current
1000
Safe Operating Area
100
PT=1ms
Cutoff Frequency (MHz)
.
.
Collector Current (mA)
10
PT=100ms
PT=1s
1
0.1
V
CE
=5V
100
1
10
100
1000
0.01
1
10
100
Collector Curren (mA)
Forward Biased Voltage (V)
Power Derating
800
700
Power Dissipation-PD (mW)
600
500
400
300
200
100
0
0
50
100
o
150
200
Ambient Temperature-Ta( C)
HSD882S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
SD
8 8 2 S
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Microchip MCU
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