HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 1/3
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Features
•
Charger-up time is about 1 ms faster than of a germanium transistor.
•
Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W
•
Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage .................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current .............................................................................................................. 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE
*hFE
fT
Cob
Min.
10
6
-
-
-
-
140
-
-
Typ.
-
-
-
-
0.3
0.83
210
200
30
Max.
-
-
100
100
0.4
1.5
-
-
-
Unit
V
V
nA
nA
V
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
VCB=20V
VBE=4V
IC=3A, IB=60mA
VCE=-1V, IC=-2A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1KHZ
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HSD879D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
125 C
75 C
o
o
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 2/3
Saturation Voltage & Collector Current
1000
V
CE(sat)
@ I
C
=50I
B
25 C
o
Saturation Voltage (mV)
hFE
100
75 C
o
hFE @ V
CE
=2V
125 C
25 C
o
o
100
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
10.0
1000
Cutoff Frequency & Collector Current
V
CE
=10V
Cutoff Frequency
V
BE(on)
@ V
CE
=2V
1
10
100
1000
10000
ON Voltage
100
1.0
10
0.1
1
1
10
100
1000
Collector Current
Collector Current
Capacitance & Reverse-Biased Voltage
100
100
Safe Operating Area
Cob
Collector Current-I
C
(mA)
Capacitance (pF)
10
10
P
T
=1ms
1
P
T
=100ms
P
T
=1S
1
1
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
Forward Voltage-V
CE
(V)
HSD879D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 3/3
A
H
SD
B
D
E
F
3
2
I
G
1
J
M
L
K
O
H
Date Code
8 7 9 D
Control Code
C
Style: Pin 1.Base 2.Collector 3.Emitter
N
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
*: Typical
DIM
A
B
C
D
E
F
G
H
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1131
0.1231
0.0737
0.0837
0.0294
0.0494
0.0462
0.0562
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
2.87
3.12
1.87
2.12
0.74
1.25
1.17
1.42
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
-
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
-
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879D
HSMC Product Specification
嵌入式系统
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