The H2N6718L is designed for general purpose medium power amplifier and
switching applications.
Features
•
High Power: 850mW
•
High Current: 1A
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................................... 850 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................................................. 5 V
IC Collector Current (Continue) ............................................................................................................................. 1 A
IC Collector Current (Pulse)................................................................................................................................... 2 A
IB Base Current (Continue) ........................................................................................................................... 200 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
300
-
-
20
MHz
pF
Unit
V
V
V
nA
mV
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IB=35mA, IC=350mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE2
Rank
Range
A
50-115
B
95-300
H2N6718L
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2004.05.03
Page No. : 2/5
Saturation Voltage & Collector Current
Saturation Voltage (mV)
100
hFE
100
10
V
CE(sat)
@ I
C
=10I
B
hFE @ VCE=1V
hFE @ VCE=5V
10
0.1
1
10
hFE @ VCE=2V
hFE@VCE=10V
1
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
100
Collector Output Capacitance
Saturation Voltage (mV)
1000
Capacitance (pF)
10
V
BE(sat)
@ I
C
=10I
B
Cob
100
1
10
100
1000
10000
1
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Base Voltage (V)
Safe Operating Area
10
1000
Cutoff Frequency & Collector Current
fT @ V
CE
=10V
1
0.1
1mS
0.01
1
100mS
1S
100
10
100
1
10
100
Forward Voltage-V
CE
(V)
Cutoff Frequency (MHz)
Collector Current-I
C
(A)
Collector Current-I
C
(mA)
H2N6718L
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2004.05.03
Page No. : 3/5
Power Derating
900
800
PD(mW), Power Dissipation
700
600
500
400
300
200
100
0
0
50
o
100
150
200
Ta( C), Ambient Temperature
H2N6718L
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2004.05.03
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
2 N
6 7 1 8 L
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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