LITE
ON
POWER
SEMICONDUCTOR
SF50KG thru SF50MG
REVERSE VOLTAGE
- 800
to
1000
Volts
FORWARD CURRENT
- 5.0
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Super fast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification
94V-0
A
DO-201AD
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
Dim.
A
DO-201AD
Min.
Max.
-
25.4
7.30
9.50
B
1.20
1.30
C
4.80
5.30
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
N
I
M
I
L
E
R
P
SYMBOL
A
5.0
150
R
Y
UNIT
V
V
V
A
SF50KG
800
560
800
SF50MG
1000
700
1000
V
RRM
V
RMS
V
DC
I
(AV)
@T
A
=
55 C
I
FSM
V
F
I
R
A
1.5
1.7
5
300
50
35
25
V
uA
ns
pF
C/W
@T
J
=25 C
@T
J
=100 C
T
RR
C
J
R
0JA
T
J
T
STG
-55 to +150
-55 to +150
C
C
REV. PRE, 24-May-2000
NOTES : 1.Measured with I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Ambient.
RATING AND CHARACTERISTIC CURVES
SF50KG thru SF50MG
LITE
ON
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
6.0
5.0
4.0
3.0
2.0
1.0
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
200
150
100
50
Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
40
60
80
100
120
140
160
20
AMBIENT TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
100
10
T
J
= 25 C, f= 1MHz
1
1
REVERSE VOLTAGE , VOLTS
N
I
M
I
L
E
R
P
10.0
INSTANTANEOUS FORWARD CURRENT ,(A)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
A
0.8
R
Y
50
100
CAPACITANCE , (pF)
1.0
SF50KG
SF50MG
0.1
0.01
T
J
= 25 C
PULSE WIDTH 300us
4
10
100
0.2
0.4
0.6
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REV. PRE, 24-May-2000
Microchip MCU
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