3EZ3.9D5~3EZ39D5
Zener diode
Features
1. Low profile package
2. Excellent clamping capability
3. Glass passivated junction
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
3
P
V
/V
Z
150
-55~+150
Unit
W
mA
℃
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Excel Semiconductor
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3EZ3.9D5~3EZ39D5
Type
3EZ3.9D5
3EZ4.3D5
3EZ4.7D5
3EZ5.1D5
3EZ5.6D5
3EZ6.2D5
3EZ6.8D5
3EZ7.5D5
3EZ8.2D5
3EZ9.1D5
3EZ10D5
3EZ11D5
3EZ12D5
3EZ13D5
3EZ14D5
3EZ15D5
3EZ16D5
3EZ17D5
3EZ18D5
3EZ19D5
3EZ20D5
3EZ22D5
3EZ24D5
3EZ27D5
3EZ28D5
3EZ30D5
3EZ33D5
3EZ36D5
3EZ39D5
V
Znom1)
V
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
I
ZT
mA
192
174
160
147
134
121
110
100
91
82
75
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
for
Z
zT
Ω
<4.5
<4.5
<4.0
<3.5
<2.5
<1.5
<2.0
<2.0
<2.3
<2.5
<3.5
<4
<4.5
<4.5
<5
<5.5
<5.5
<6
<6
<7
<7
<8
<9
<10
<12
<16
<20
<22
<28
Z
ZK
at
Ω
<400
<400
<500
<550
<600
<700
<700
<700
<700
<700
<700
<700
<700
<700
<700
<700
<700
<750
<750
<750
<750
<750
<750
<750
<750
<1000
<1000
<1000
<1000
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
μA
<80
<30
<20
<5
<5
<5
<5
<5
<5
<3
<3
<1
<1
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
at
V
R
V
1.0
1.0
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
7.6
8.4
9.4
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
I
ZM
mA
630
590
550
520
480
435
393
360
330
297
270
225
246
208
193
180
169
159
150
142
135
123
112
100
96
90
82
75
69
1)
Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
) at 25℃,
9.5mm (3/8”) from the diode body.
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
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