PPBHV8110DA
NPN Low Vce(sat) Transistor
Voltage
Features
100V
Current
1A
SOT-23
Unit: inch(mm)
Silicon NPN epitaxial type
Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA
High collector current capability
Excellent DC current gain characteristics
Lead free in comply with EU RoHS 2.0
Green molding compound as per IEC61249 Standard
PNP complement: PBHV9110DA
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.009 grams
Marking: 811
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance from Junction to Ambient
(Note )
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
J
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
V
A
A
W
o
o
o
120
100
6
1
3
1.25
150
-55~150
100
C
C
C/W
Note: Mounted on FR4 PCB at 1 inch square copper pad.
August 16,2019-REV.00
Page 1
PPBHV8110DA
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON characteristics
DC Current Gain
(Note1)
V
CE
= 2V, I
C
= 150mA
h
FE
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
Collector-Emitter Saturation Voltage
(Note1)
Base-Emitter Saturation voltage
(Note1)
Transition Frequency
Collector Output Capacitance
I
C
= 0.1A, I
B
= 10mA
V
CE(SAT)
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 0.1A
V
BE(SAT)
f
T
C
OB
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.5A, I
B
= 50mA
V
CE
= 5V, I
E
= -50mA
V
CB
= 10V, I
E
= 0A,
f=1MHz
140
100
40
-
-
-
-
-
100
-
-
38
117
220
-
-
-
-
-
330
300
-
120
350
450
1.0
V
1.1
-
10
MHz
pF
mV
-
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= 10mA, I
B
= 0A
I
C
= 0.1mA, I
E
= 0A
I
E
= 0.1mA, I
C
= 0A
V
CB
= 120V, I
E
= 0A
V
EB
= 6V, I
C
= 0A
100
120
6
-
-
-
-
-
-
-
-
-
-
500
500
V
V
V
nA
nA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
Note: 1. Pulse width<300us, Duty cycle<2%
August 16,2019-REV.00
Page 2
PPBHV8110DA
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC Current Gain
Fig.2 DC Current Gain
Fig.3 Collector-Emitter Saturation Voltage
Fig.4 Collector-Emitter Saturation Voltage
Fig.5 Base-Emitter Saturation Voltage
Fig.6 Base-Emitter Saturation Voltage
August 16,2019-REV.00
Page 3
PPBHV8110DA
TYPICAL CHARACTERISTIC CURVES
Fig.7 Base-Emitter Voltage
Fig.8 Collector Current
Fig.9 Input Capacitance
Fig.10 Output Capacitance
Fig.11 Power Derating Curve
August 16,2019-REV.00
Page 4
PPBHV8110DA
PART NO PACKING CODE VERSION
Part No Packing Code
PBHV8110DA_R1_00001
Package Type
SOT-23
Packing Type
3k pcs / 7” reel
Marking
811
Version
Halogen free
MOUNTING PAD LAYOUT
August 16,2019-REV.00
Page 5
详细参数
全文预览
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
