LITE-ON
SEMICONDUCTOR
ES1J thru ES1M
REVERSE VOLTAGE -
600
to
1000
Volts
FORWARD CURRENT -
1.0
Ampere
SURFACE MOUNT
SUPER FAST RECTIFIERS
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
B
SMA
SMA
A
C
DIM.
A
B
C
D
E
F
F
D
G
H
MIN.
4.06
2.29
1.27
0.15
4.83
0.05
MAX.
4.57
2.92
1.63
0.31
5.59
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
G
H
E
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
N
I
M
I
L
E
R
P
SYMBOL
A
ES1K
800
560
800
1.0
30
1.5
5
200
R
Y
2.01
0.76
ES1J
600
420
600
ES1M
1000
700
1000
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
L
=110 C
I
FSM
V
F
I
R
A
1.3
1.7
V
uA
@T
J
=25 C
@T
J
=125 C
T
RR
C
J
35
50
10
25
ns
pF
C/W
R
0JL
T
J
T
STG
-55 to +150
-55 to +150
C
C
REV. 1-PRE, 01-Dec-2000, KSGA03
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
RATING AND CHARACTERISTIC CURVES
ES1J thru ES1M
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
1.0
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
30
0.8
0.6
20
0.4
10
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0.2
0
20
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
1
2
5
10
40
60
80
100
120
140
160
20
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT, (A)
1000
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
ES1J
1.0
0.1
.01
0.6
0.8
1.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
N
I
M
I
L
E
R
P
INSTANTANEOUS
REVERSE CURRENT, (uA)
ES1K
ES1M
T
J
= 125 C
A
60
R
Y
50
100
100
10
T
J
= 25 C
1.0
T
J
= 25 C
PULSEWIDTH:300us
0.1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
20
40
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 1-PRE, 01-Dec-2000, KSGA03
Microchip MCU
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