BAV201 - BAV203
SURFACE MOUNT SWITCHING DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
•
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
Outline Similar to JEDEC 213AA
A
B
Mechanical Data
•
•
•
•
•
Case: QuadroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.034 grams (approx.)
Dim
A
B
C
D
QuadroMELF
Min
3.3
1.4
Max
3.7
1.6
1.7∅ Typical
0.3 Typical
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
BAV201
120
100
71
BAV202
200
150
106
250
125
1.0
500
300
-65 to +175
BAV203
250
200
141
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
@ Rated DC Blocking Voltage
Junction Capacitance
Reverse Recovery Time
@ T
A
= 25°C unless otherwise specified
Symbol
V
FM
I
RM
C
j
t
rr
Min
Max
1.0
100
15
1.5
50
Unit
V
nA
µA
pF
ns
Test Condition
I
F
= 100mA
T
A
= 25°C
T
A
= 100°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
DS30012 Rev. B-2
1 of 2
C
D
BAV201-BAV203
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1000
T
j
= 25
°
C
100
I
R
, LEAKAGE CURRENT (nA)
100
10
10
1
1.0
0.1
0.1
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
0.01
0
100
200
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 2 Leakage Current vs Junction Temperature
DS30012 Rev. B-2
2 of 2
BAV201-BAV203
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