BZX83C Series
Zener diode
Features
High reliability
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
I=4mm T
L
≤25℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
-65~+175
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=4mm T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=50mA
Type
Symbol
V
F
Min
Typ
Max
1.0
Unit
V
Excel Semiconductor
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Rev. 3f, 1-Jun-2008
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BZX83C Series
Type
BZX83C
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
V
Znom
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
for V
ZT
and
mA
V
5
2.5~2.9
5
2.8~3.2
5
3.1~3.5
5
3.4~3.8
5
3.7~4.1
5
4.0~4.6
5
4.4~5.0
5
4.8~5.4
5
5.2~6.0
5
5.8~6.6
5
6.4~7.2
5
7.0~7.9
5
7.7~8.7
5
8.5~9.6
5
9.4~10.6
5
10.4~11.6
5
11.4~12.7
5
12.4~14.1
5
13.8~15.6
5
15.3~17.1
5
16.8~19.1
5
18.8~21.2
5
20.8~23.3
5
22.8~25.6
5
25.1~28.9
5
28~32
5
31~35
5
34~38
2.5
37~41
2.5
40~46
2.5
44~50
2.5
48~54
2.5
52~60
2.5
58~66
2.5
64~72
2.5
70~79
r
zjT
Ω
<90
<90
<90
<90
<90
<80
<80
<60
<40
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<55
<55
<58
<80
<80
<80
<90
<90
<100
<100
<120
<125
<135
<170
<200
<250
r
zjK
at
Ω
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<600
<700
<700
<1000
<1000
<1000
<1500
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
and
µA
<100
<60
<30
<20
<10
<5
<2
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
I
R
at V
R
µA
1)
V
<50
1
<40
1
<40
1
<40
1
<40
1
<20
1
<10
1
<2
1
<2
1
<2
2
<2
3
<2
3.5
<2
4
<2
5
<2
6
<2
8.2
<2
9.1
<2
10
<2
11
<2
12
<2
13
<2
15
<2
16
<2
18
<2
20
<2
22
<2
24
<2
27
<5
30
<5
33
<5
36
<10
39
<10
43
<10
47
<10
51
<10
56
TK
VZ
%/K
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
at T
j
=150℃
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
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BZX83C Series
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1. Thermal Resistance vs. Lead length
Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Total Power Dissipation vs. Ambient
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25℃
Figure 6. Diode Capacitance vs. Z-voltage
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
3/5
BZX83C Series
Figure 7. Forward Current vs. Forward Voltage
Figure 9. Z-Current vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance Vz vs. Z-Voltage
Figure 11. Thermal Response
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
4/5
BZX83C Series
Dimensions in mm
Cathode identification
Type No.
Φ0.55
max.
Cathode
Φ2.0
max.
BZ X
83C
26 min.
4.2 max.
26 min.
Anode
Standard Glass Case
JEDEC DO-35
Marking
BZX
8 3C
5V1
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
5/5
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