NJ6N60 POWER MOSFET
6.2A 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The
NJ6N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics.
This power MOSFET is usually used
at high speed switching applications in switching power supplies
and adaptors.
1
TO-220
FEATURES
* V
DS
= 600V
* I
D
=
6.2A
*
RDS(ON) = 1.5
ohm@VGS
= 10V
*
Ultra low gate charge (typical 20 nC )
*
Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ6N60-LI
NJ6N60-BL
NJ6N60F-LI
NJ6N60A-LI
NJ6N60D-TR
NJ6N60D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ6N60 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed 6N60
(Note 3)
Avalanche Energy
6N60-P
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
TO-251
TO-252
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
RATINGS
600
±30
6.2
6.2
24.8
440
260
13
4.5
125
40
55
UNIT
V
V
A
A
A
mJ
mJ
mJ
ns
W
W
W
P
D
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
:
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25 , Starting T
J
= 25°C
4. I
SD
6.2A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
TO-251/TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
JA
Junction to Case
JC
RATING
62.5
62.5
110
1.0
3.2
2.27
2.27
UNIT
°C/W
°C/W
NJ6N60 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A
6N60
Static Drain-Source On-State
V
GS
= 10V, I
D
= 3.1A
R
DS(ON)
Resistance
6N60-P
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
6N60
t
R
6N60-P
V
DD
=300V, I
D
=6.2A,
R
G
=25
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
6N60
t
F
6N60-P
Total Gate Charge
Q
G
V
DS
=480V, I
D
=6.2A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
V
GS
= 0V, I
D
= 250 A
600
V
V
DS
= 600V, V
GS
= 0V
10
A
V
GS
= 30V, V
DS
= 0V
100 nA
I
GSS
V
GS
= -30V, V
DS
= 0V
-100 nA
BV
DSS
/ T
J
I
D
=250 A, Referenced to 25°C
0.53
V/°C
2.0
1.0
1.0
4.0
1.5
1.5
V
770 1000 pF
95 120 pF
10
13
pF
20
70
60
40
80
70
20
4.9
9.4
50
150
100
90
100
100
25
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
1.4
6.2
24.8
290
2.35
NJ6N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ6N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
stm32/stm8
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