2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
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2SB030070MLJY is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
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Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
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Chip Size:300µm X 300µm;
Chip Thickness: 155±20µm
Chip Topography and Dimensions
La: Chip Size:300µm;
Lb: Pad Size: 150µm;
ORDERING SPECIFICATIONS
Product Name
2SB030070MLJY
Specification
For Au and AlSi wire bonding
package
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ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
70
70
1
125
-40~125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Symbol
V
BR
V
F
Test Conditions
I
R
=8
µA
I
F
=1.0mA
I
F
=10mA
I
F
=15mA
Reverse Current
I
R
V
R
=50V
V
R
=70V
--
--
Min.
70
Max.
--
0.40
0.71
0.95
0.08
8
V
Unit
V
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.10.15
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