DONGGUAN NANJING ELECTRONICS LTD.,
TO-126 Plastic-Encapsulate Transistors
TO-126
BD135/BD137/BD139
FEATURES
TRANSISTOR (NPN)
1.
2.
3.
EMITTER
COLLECTOR
BASE
·High Current(1.5A)
·Low Voltage(80V)
MAXIMUM RATINGS (T
A
=25 unless otherwise noted )
=25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
123
Value
BD135
45
45
BD137
60
60
5
1.5
1.25
150
-55-150
BD139
80
80
Units
V
V
V
A
W
℃
℃
ELECTRICAL
unless
CHARACTERISTICS(Tamb=25
℃unless
otherwise
Symbol
Test conditions
BD135
specified)
MIN
TYP
MAX
UNIT
Parameter
45
60
80
45
60
80
5
0.1
10
25
40
25
0.5
1
V
V
V
µA
µA
V
V
Collector-base breakdown voltage
V
(BR)CBO
Ic=
100
µA,I
E
=0
BD137
BD139
BD135
Collector-emitter breakdown voltage
V
(BR)CEO*
Ic=
30
mA,I
B
=0
BD137
BD139
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
I
E
=
100
µA,I
C
=0
V
CB
=
30
V,I
E
=0
V
EB
=
5
V,I
C
=0
V
CE
=
2
V,I
C
=
5
mA
V
CE
=
2
V,I
C
=
150
mA
V
CE
=
2
V,I
C
=
500
mA
I
C
=
500
mA,I
B
=
50
mA
V
CE
=
2
V,I
C
=
500
mA
DC current gain
h
FE(2)
h
FE(3)
250
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
*PULSE TEST
CLASSIFICATION OF hFE(2)
Rank
Range
40-100
100-200
200-300
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