SOT-23 Plastic-Encapsulate
MOSFETs
BSS84
P-CHANNEL MOSFET
DONGGUAN NANJING ELECTRONICS LTD.,
V
(BR)DSS
-50 V
R
DS(on)
MAX
8Ω
@-10V
10Ω@ -5V
I
D
-0.13A
SOT-23
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve
energy, making this device ideal for use in small power management circuitry.
FEATURE
Energy Efficient
Low Threshold Voltage
High-speed Switching
Miniature Surface Mount Package Saves Board Space
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
DC−DC converters,load switching, power management in portable and battery−powered products such
as computers, printers, cellular and cordless telephones.
MARKING
Equivalent Circuit
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note 1)
@tp <10
μs
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes , Duration
for 5 Seconds
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
T
L
Value
-50
±20
-0.13
-0.52
225
556
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
1
A-5,Jun,2014
BSS84
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 3)
Drain-source on-resistance
(note 3)
Forward transconductance
(note 1)
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
R
L
=50Ω,
I
D
=-2.5A
2.5
1
16
8
ns
ns
ns
ns
C
iss
C
oss
C
rss
V
DS
=5V,V
GS
=0V,f =1MHz
30
10
5
pF
pF
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
GS
= 0V, I
D
=-250µA
V
DS
=-50V,V
GS
= 0V
V
DS
=-25V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-5V, I
D
=-0.1A
V
GS
=-10V, I
D
=-0.1A
V
DS
=-25V; I
D
=-100mA
50
-0.9
-50
-15
-0.1
±5
-2
10
8
V
µA
µA
µA
V
Ω
Ω
mS
Symbol
Test Condition
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Diode forward voltage
(note 3)
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3.
Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting.
I
S
I
SM
V
SD
I
S
=-0.13A, V
GS
= 0V
-0.13
-0.52
-2.2
A
A
V
2
A-5,Jun,2014
BSS84
Typical Characteristics
Output Characteristics
-0.7
-0.6
Transfer Characteristics
V
DS
=-10V
V
GS
=-6V
(A)
-0.5
-0.6
V
GS
=-10V
-0.5
(A)
I
D
-0.4
DRAIN CURRENT
V
GS
=-4.5V
DRAIN CURRENT
I
D
-0.4
T
a
=25
℃
T
a
=100
℃
-0.3
-0.3
V
GS
=-4V
-0.2
-0.2
V
GS
=-3V
-0.1
-0.1
V
GS
=-2.5V
-0.0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-0.0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
10
20
R
DS(ON)
—— V
GS
T
a
=25
℃
9
Pulsed
18
16
8
(
)
(
)
V
GS
=-5V
14
R
DS(ON)
R
DS(ON)
7
I
D
=-0.1A
12
10
8
6
4
6
ON-RESISTANCE
5
ON-RESISTANCE
T
a
=100
℃
4
V
GS
=-10V
3
T
a
=25
℃
2
2
0
-100
-150
-200
-250
-300
-350
-400
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
1
-50
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
-1
-2.2
Threshold Voltage
-2.0
(V)
I
S
(A)
THRESHOLD VOLTAGE
V
TH
-1.8
SOURCE CURRENT
-1.6
I
D
=-250uA
-0.1
-1.4
T
a
=100
℃
T
a
=25
℃
-1.2
-1.0
-0.01
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-0.8
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
3
A-5,Jun,2014
BSS84
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
SOT-23 Suggested Pad Layout
4
A-5,Jun,2014
BSS84
SOT-23 Tape and Reel
5
A-5,Jun,2014
单片机
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