DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
BC856A, B
BC857A, B,C
BC858A, B,C
TRANSISTOR
(PNP)
SOT-23
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
200
150
-65-150
V
A
mW
℃
℃
Unit
1. BASE
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
BC856
BC857
BC858
Collector-Emitter Voltage
V
V
CEO
BC856
BC857
BC858
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BC856A=3A; BC856B=3B;
BC857A=3E;BC857B=3F;BC857C=3G;
BC858A=3J; BC858B=3K; BC858C=3L
V
DEVICE MARKING
A,May,2011
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Collector-emitter breakdown voltage
BC856
BC857
BC858
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
Collector cut-off current
BC856
BC857
BC858
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
V
CE(sat)
V
BE(sat)
I
C
=-100mA,I
B
= -5 mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5 V, I
C
= -10mA
h
FE
V
CE
= -5V,I
C
= -2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= -1
μ
A, I
C
=0
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
V
CE
= -25 V , I
B
=0
V
EB
= -5 V , I
C
=0
125
220
420
-0.1
250
475
800
-0.5
-1.1
100
4.5
V
V
MHz
pF
-0.1
-0.1
V
CEO
I
C
= -10mA, I
B
=0
V
CBO
I
C
= -10
μ
A, I
E
=0
Symbol
Test conditions
Min
-80
-50
-30
-65
-45
-30
-5
V
V
V
Max
Unit
μ
A
μ
A
μ
A
f
T
C
ob
f=
100MHz
V
CB
=-10V, f=1MHz
A,May,2011
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