DONGGUAN NANJING ELECTRONICS LTD.,
TO-220 Plastic-Encapsulate Transistors
TO-220
13003
TRANSISTOR (NPN)
FEATURES
1. BASE
2. COLLECTOR
3. EMITTER
·
power switching applications
MAXIMUM RATINGS (T
a
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction
Temperature
unless otherwise noted)
Value
700
400
9
1.5
2
150
-55 150
Unit
V
V
V
A
W
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V
CE(sat)
V
BE(sat)
f
T
t
f
Symbol
S ymbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
unless otherwise specified)
Test conditions
I
C
=5mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=2mA, I
C
=0
V
CB
=700V,I
E
=0
V
CE
=400V,I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
= 0.5 A
V
CE
=5V, I
C
= 1.5A
I
C
=1A,I
B
=0.25A
I
C
=1A,I
B
=0.25A
V
CE
=10V,Ic=100mA, f =1MHz
I
C
=1A, I
B1
=-I
B2
=0.2A, V
CC
=100V
I
C
=250mA (UI9600)
2
5
0.5
4
8
5
0.6
1.2
V
V
MHz
µs
s
Min
700
400
9
1
0.5
1
40
Typ
Max
Unit
V
V
V
mA
mA
mA
t
S
CLASSIFICATION OF
h
FE
1
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF
t
S
Rank
Range
A1
2-2.5 ( s )
A2
2.5-3(
s)
B1
3-3.5(
s)
B2
3.5-4 (
s)
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