DONGGUAN NANJING ELECTRONICS LTD.,
TO-220
13005
FEATURES
I
Plastic-Encapsulate Transistors
TO-220
MAXIMUM RATINGS (T
a
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
JA
unless otherwise noted)
Value
Unit
Parameter
T
j
T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
unless otherwise specified)
Test
conditions
Min
Typ
Max
Unit
Symbol
DC current gain
10
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
Transition frequency
Rise time
Storage time
Fall time
0
0
CLASSIFICATION of h
FE
Range
10~15
15~20
20~25
25~30
30~35
35~40
40~45
45~50
50~55
55~60
CLASSIFICATION of
Rank
Range
A
02
A2
2.5
0
3.0
B2
3.5 4.0
Typical Characteristics
500
COMMON EMITTER
T
a
=25
100
20mA
18mA
16mA
Ta=100 C
o
(mA)
400
I
C
COLLECTOR CURRENT
300
DC CURRENT GAIN
14mA
12mA
h
FE
10
Ta=25 C
o
200
10mA
8mA
6mA
100
4mA
I
B
=2mA
COMMON EMITTER
V
CE
=5V
6
1
0.1
1
10
100
1000
4000
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
1200
=4
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
Ta=100
Ta=25
100
=5
=5
1000
800
Ta=25
Ta=25
Ta=100
=4
=4
600
Ta=100
10
0.1
1
10
100
1000
4000
400
0.1
1
10
100
1000
4000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
4000
1000
10
(mA)
T
a
=100
10
TRANSITION FREQUENCY
100
COLLCETOR CURRENT
I
C
f
T
T
a
=25
3
1
(MHz)
COMMON EMITTER
V
CE
=5V
COMMON EMITTER
V
CE
=10V
T
a
=25 C
o
0.1
200
400
600
800
1000
1200
1
0.1
0.2
0.3
0.4
0.5
BASE-EMMITER VOLTAGE
V
BE
(mV)
COLLECTOR CURRENT
I
C
(A)
10000
2.5
f=1MHz
I
E
=0/ I
C
=0
Ta=25 C
COLLECTOR POWER DISSIPATION
Pc (W)
o
2.0
(pF)
1000
CAPACITANCE
C
1.5
1.0
100
0.5
10
0.1
1
10
20
0.0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
Ta
(
)
stm32/stm8
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