1N4448
Silicon Epitaxial Planar Switching Diode
Applications
• High-speed switching
Max. 0.5
Max. 1.9
Min. 27.5
This diode is also available in MiniMELF case with
the type designation LL4448.
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Surge Forward Current at t < 1 s
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
V
RM
V
R
I
F(AV)
I
FSM
P
tot
T
j
T
stg
Value
100
75
150
500
500
1)
Unit
V
V
mA
mA
mW
O
200
- 65 to + 200
C
C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 100 mA
Reverse Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
Min.
0.62
-
-
-
-
100
-
-
Max.
0.72
1
25
5
50
-
4
4
Unit
V
I
R
I
R
I
R
V
(BR)R
C
tot
t
rr
nA
µA
µA
V
pF
ns
1N4448
Forward characteristics
mA
10
3
Dynamic forward resistance
versus forward current
1N 4448
1N 4448
10
4
5
2
Tj=25
o
C
f=1KHz
10
2
i
F
10
o
Tj=100 C
o
Tj=25 C
10
3
r
f
5
2
10
2
1
5
2
10
-1
10
5
2
10
-2
0
1
V
F
2V
1
10
-2
10
-1
1
10
I
F
10
2
mA
Admissible power dissipation
versus ambient temperature
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
Relative capacitance
versus reverse voltage
mW
1000
900
800
700
600
500
400
300
200
100
0
0
100
1N 4448
1N 4448
Tj=25
o
C
f=1MHz
1.1
C
tot
(V
R
)
C
tot
(0V)
1.0
P
tot
0.9
0.8
0.7
200
o
C
T
amb
0
0
2
4
6
V
R
8
10 V
1N4448
Leakage current
versus junction temperature
nA
10
4
5
2
1N 4448
10
3
I
R
5
2
10
2
5
2
10
5
V
R
=20V
2
1
0
100
T
j
200 C
o
Admissible repetitive peak forward current
versus pulse duratin
A
100
5
4
3
2
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4448
I
v=tp/T
T=1/fp
I
FRM
v=0
tp
t
10
I
FRM
5
4
3
2
0.1
T
0.2
0.5
1
5
4
3
2
0.1
10
-5
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10 s
t
p
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