DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N5551
TRANSISTOR (NPN)
1. EMITTER
FEATURES
General Purpose Switching Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
625
200
150
-55~+150
2. BASE
3. COLLECTOR
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
（
1
）
V
CE(sat)
（
2
）
V
BE (sat)
（
1
）
V
BE (sat)
（
2
）
C
ob
C
ib
f
T
*
Test
conditions
Min
180
160
6
Typ
Max
Unit
V
V
V
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CB
=10V,I
E
=0, f=1MHz
V
BE
=0.5V,I
C
=0, f=1MHz
V
CE
=10V,I
C
=10mA, f=100MHz
V
(BR)EBO
50
50
80
80
50
0.15
0.2
1
1
6
20
100
300
300
nA
nA
V
V
V
V
pF
pF
MHz
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
Transition frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
CLASSIFICATION OF h
FE(2)
RANK
RANGE
80-100
A
100-150
B
150-200
C
200-300
A,Jun,2011
Typical Characteristics
18
2N5551
h
FE
—— I
C
COMMON EMITTER
V
CE
=5V
T
a
=100
℃
Static Characteristic
90uA
COMMON
EMITTER
T
a
=25
℃
h
FE
500
(mA)
15
80uA
70uA
I
C
12
COLLECTOR CURRENT
DC CURRENT GAIN
60uA
50uA
40uA
T
a
=25
℃
100
9
6
30uA
I
B
=20uA
3
0
0
2
4
6
8
10
12
10
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
200
COLLECTOR CURRENT
I
C
(mA)
1.0
V
BEsat
——
β=10
I
C
0.3
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
0.1
0.6
T
a
=100
℃
T
a
=25
℃
0.4
0.2
0.1
0.01
1
10
100
200
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
200
100
——
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
COMMON EMITTER
V
CE
=5V
(pF)
C
ib
I
C
(mA)
T
a
=25
℃
T
a
=100
℃
COLLECTOR CURRENT
T
a
=25
℃
10
CAPACITANCE
C
10
C
ob
1
0.2
0.4
BASE-EMITTER VOLTAGE
0.6
V
BE
(V)
0.8
1.0
1
0.1
1
10
20
REVERSE VOLTAGE
V
(V)
f
T
150
——
I
C
750
P
C
——
T
a
V
CE
=10V
(MHz)
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
1
10
625
f
T
TRANSITION FREQUENCY
100
500
375
250
125
50
0
3
20
30
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Jun,2011
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
