MMBTA44
NPN Silicon Epitaxial Planar Transistor
for high voltage switching and amplifier applications.
The transistor is subdivided into one group according
to its DC current gain. As complementary type the
PNP transistor MMBTA94 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
500
400
6
300
200
150
-55 to +150
Unit
V
V
V
mA
mW
O
C
C
O
MMBTA44
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at I
C
=1mA, V
CE
=10V
at I
C
=10mA, V
CE
=10V
at I
C
=30mA, V
CE
=10V
Emitter Cutoff Current
at V
EB
=4V
Collector Cutoff Current
at V
CB
=400V
Collector Cutoff Current
at V
CE
=400V
Collector Base Breakdown Voltage
at I
C
=100µA
Collector Emitter Breakdown Voltage
at I
C
=1mA
Emitter Base Breakdown Voltage
at I
E
=100µA
Collector Saturation Voltage
at I
C
=1mA, I
B
=0.1mA
at I
C
=10mA, I
B
=1mA
at I
C
=50mA, I
B
=5mA
Base Saturation Voltage
at I
C
=10mA, I
B
=1mA
Collector Output Capacitance
at V
CB
=20V, f=1MHz
C
ob
-
7
pF
V
BE(sat)
-
0.75
V
V
CE(sat)
V
CE(sat)
V
CE(sat)
-
-
-
0.4
0.5
0.75
V
V
V
V
(BR)EBO
6
-
V
V
(BR)CEO
400
-
V
V
(BR)CBO
500
-
V
I
CEO
-
0.5
µA
I
CBO
-
0.1
µA
I
EBO
-
0.1
µA
h
FE
h
FE
h
FE
25
40
40
-
-
-
-
-
-
Min.
Max.
Unit
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