ESD Protection Diode
Feature
100 Watts peak pulse power (tp = 8/20 s)
Tiny SOD882 package
Bidirectional configurations
Protects one I/O port
Low clamping voltage
Low Leakage current
ESD-immunity acc. IEC 61000-4-2 ±8KV contact
±15KV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 24A (8/20 s)
SES5VD882-2B
SOD882
Application
Cell Phone
PDA
Notebook
Digital Cameras
Portable Instrumentation
Audio and video equipment
Schematic Diagram
Absolute Maximum Ratings
(T
A
=25
, Unless otherwise specified.)
Parameter
Peak Pulse Power (T
P
=8/20 S)
Peak Pulse Current ( t
P
= 8/20 S )
Junction Temperature
Storage temperature
Symbol
P
PP
I
PP
T
J
T
STG
Value
100
8
-55 to +125
-55 to +150
Unit
W
A
Electrical Characteristics
(T
A
=25
, Unless otherwise specified.)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Condition
Min
Typ
Max
5
Unit
V
V
A
V
V
pF
I
T
=1mA
V
R
=5V
I
PP
=1A
I
PP
=8A
T
P
=8/20 S
T
P
=8/20 S
6
6.8
8
1
10
13
V
R
=0V,f=1MHz
14
1
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ESD Protection Diode
Typical Characteristic Curves
Fig.1 Peak Pulse Power Rating Curve
10
Fig.2 Pulse Derating Curve
110
100
80
60
1
0.1
40
20
0.01
0.1
1
10
100
1000
0
0
25
50
75
100
125
)
150
Pulse Duration t
p
( s)
Ambient TemperatureT
A
(
Fig.3 Pulse Waveform-8/20
s
120
100
100%I
PP
, 8 S
Fig.4 Pulse Waveform-ESD(IEC61000-4-2)
100%
90%
30ns
80
e
-t
60
40
20
10%
t
r
0.7 to 1ns
50%I
PP
, 20 S
60ns
0
0
5
10
15
20
25
30
0
30
Time (ns)
60
Time ( s)
Product Dimension
2
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