8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into four groups, B, C, D
and E, according to its DC current gain. As
complementary type the PNP transistor ST 8550 is
recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25℃)
Symbol
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Value
25
40
6
800
1
100
625
1)
Unit
V
V
V
mA
A
mA
mW
O
O
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
S
150
-55 to +150
C
C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8050
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=1V, I
C
=100mA
ST 8050B
ST 8050C
ST 8050D
ST 8050E
at V
CE
=1V, I
C
=350mA
Collector Cutoff Current
at V
CB
=35V
Collector Saturation Voltage
at I
C
=500mA, I
B
=50mA
Base Saturation Voltage
at I
C
=500mA, I
B
=50mA
Collector Emitter Breakdown Voltage
at I
C
=2mA
Collector Base Breakdown Voltage
at I
C
=10μA
Emitter Base Breakdown Voltage
at I
E
=100μA
Gain Bandwidth Product
at V
CE
=5V, I
C
=10mA, f=50MHz
Collector Base Capacitance
at V
CB
=10V, f=1MHz
Thermal Resistance Junction to Ambient
1)
Min.
70
120
160
300
60
-
-
-
25
40
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
100
12
-
Max.
120
200
300
380
-
100
0.5
1.2
-
-
-
-
-
200
1)
Unit
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
K/W
h
FE
h
FE
h
FE
h
FE
h
FE
I
CBO
V
CE(sat)
V
BE(sat)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
f
T
C
CBO
R
thA
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8050
Admissible power dissipation
versus ambient temperature
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
Collector current
versus base emitter voltage
W
1
mA
3
10
5
2
25 C
-50 C
o
o
0.8
10
2
5
150 C
typical
limits
at Tamb=25
o
C
o
P
tot
0.6
I
C
10
2
0.4
5
2
1
0.2
5
2
0
0
100
T
amb
200 C
o
10
-1
0
1
V
BE
2V
Pulse thermal resistance
versus pulse duration
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
Gain bandwidth product
versus collector current
MHz
10
3
7
5
4
3
K/W
3
10
5
2
o
Tamb=25 C
f=20MHz
10
r
thA
10
2
5
2
0.5
f
T
0.2
0.1
0.05
2
V
CE
=5V
1V
10
2
7
5
4
0.01
tp
tp
v=
T
T
P
I
5
2
0.02
1
5
2
3
2
0.005
v=0
10
-1
-
1
-
6
-
4
-
5
-
3
-
2
10 10 10 10 10 10
1
10
10 S
2
10
1
2
5
10
2
5
10
2 2
5
10
3
mA
t
p
I
C
8050
C o llecto r satu ratio n vo ltag e
versu s co llecto r cu rren t
V
0.5
typ ical
lim its
at Tam b =25
o
C
DC current gain
versus collector current
1000
700
500
400
300
200
V
CE
=1V
0.4
Ic
I
B
150
o
C
o
C
=25
b
=10
V
C E
sat
0.3
h
FE
Tam
100
0.2
70
50
40
-50
o
C
0.1
150
o
C
25 C
-50 C
o
o
30
20
0
10
-1
1
10
10
2
10
3
m A
I
C
10
10
-1
1
10
10
2
10
3
I
C
Base saturation voltage
versus collector current
V
2
typical
lim its
at Tam b=25
o
C
Ic
I
B
V
BE
sat
=10
Com m on em itter
collector characteristics
mA
500
3.2
2.8
2.4
400
2
1.8
1.6
I
C
300
1.4
1.2
1
-50 C
o
C
25
o
1
200
0.8
0.6
150
o
C
100
I
B
=
0.2m A
0.4
0
10
-1
1
10
10
2
10
3
m A
I
C
0
0
1
2V
V
CE
8050
Common emitter
collector characteristics
mA
100
0.35
Common emitter
collector characteristics
mA
500
0.9
0.85
80
0.3
400
I
C
60
0.25
I
C
0.2
300
0.8
40
0.15
200
20
0.1
100
I
B
=0.05mA
0.75
V
BE
=0.7V
0
0
10
20V
V
CE
0
0
1
V
CE
2V
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
