DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
3DD13002B
FEATURES
TRANSISTOR（ NPN
）
TO-92
·
power switching applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
600
400
6
0.8
0.9
150
-55~150
Unit
V
V
V
A
W
℃
1.EMITTER
2. COLLECTOR
3. BASE
℃
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
= 100μA,I
C
=0
V
CB
= 610V,I
E
=0
V
CB
= 405V,I
E
=0
V
EB
= 6 V, I
C
=0
V
CE
= 10 V, I
C
=200mA
V
CE
= 10 V, I
C
=0.25mA
I
C
=200mA, I
B
=40mA
I
C
=200mA, I
B
=40mA
V
CE
=10V, I
C
=100mA
f =1MHz
I
C
=1A,
I
B1
=-I
B2
=0.2A
5
0.5
2.5
9
5
0.5
1.1
V
V
MHz
µs
µs
Min
600
400
6
100
100
100
40
Typ
Max
Unit
V
V
V
µA
µA
µA
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
h
FE1
Dc
current
gain
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V
CE(sat)
V
BE(sat)
f
T
t
f
t
s
V
CC
=100V
CLASSIFICATION OF h
FE1
Range
9-15
15-20
20-25
25-30
30-35
35-40
Typical Characteristics
Static Characteristic
300
100
3DD13002B
h
FE
COMMON EMITTER
V
CE
= 10V
——
I
C
(mA)
250
COMMON
EMITTER
T
a
=25
℃
10mA
9mA
h
FE
T
a
=100
℃
DC CURRENT GAIN
200
I
C
COLLECTOR CURRENT
8mA
7mA
T
a
=25
℃
10
150
6mA
100
5mA
4mA
50
3mA
2mA
I
B
=1mA
1
0
2
4
6
8
10
12
14
1
0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
100
800
(mA)
1000
V
BEsat
——
β=5
I
C
1000
V
CEsat
β=5
——
I
C
800
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
100
600
T
a
=100
℃
400
T
a
=25
℃
200
0
0.1
1
10
100
800
10
0.5
1
10
100
800
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
800
——
V
BE
10
f
T
COMMON EMITTER
V
CE
=10V
——
I
C
(MHz)
COMMON EMITTER
V
CE
=10V
(mA)
100
8
T
a
=25
℃
I
C
T =1
00
℃
a
TRANSITION FREQUENCY
1000
1200
f
T
COLLECTOR CURRENT
10
T =2
5
℃
a
6
4
1
2
0.1
0
200
400
600
800
0
20
40
60
80
100
120
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
1000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
1200
P
C
——
T
a
C
ib
(pF)
100
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
900
CAPACITANCE
C
600
C
ob
10
300
1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Aug,2012
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