MMBT9015
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications
As complementary types the NPN transistor
MMBT9014 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
50
45
5
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 1 mA
Current Gain Group B
C
D
Symbol
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
C
OB
NF
Min.
110
200
420
-
-
50
45
5
-
-
100
-
-
Max.
220
450
800
50
50
-
-
-
0.65
1
-
7
10
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
dB
Collector Base Cutoff Current
at -V
CB
= 50 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 5 mA
Base Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 5 mA
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA
Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
Noise Figure
at -V
CE
= 5 V, -I
C
= 200 µA, f = 1 KHz, R
G
= 2 KΩ
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
