DONGGUAN NANJING ELECTRONICS LTD.,
TO-126 Plastic-Encapsulate Transistors
MJE13003
TO-126
TRANSISTOR (NPN)
FEATURES
Power Switching Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
1 . BASE
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
600
400
6
1
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
*
h
FE(2)
V
CE(sat)1
V
BE(sat)
Test
conditions
Min
600
400
6
100
100
10
9
5
0.5
1.1
5
0.5
2
4
V
V
MHz
μs
40
Typ
Max
Unit
V
V
V
uA
uA
uA
I
C
= 0.1mA,I
E
=0
I
C
= 1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=600V,I
E
=0
V
CE
=400V,I
B
=0
V
EB
=7V,I
C
=0
V
CE
=10V, I
C
=200mA
V
CE
=10V, I
C
=250μA
I
C
=200mA,I
B
=40mA
I
C
=200mA,I
B
=40mA
V
CE
=10V, I
C
=100mA,f=1MHz
I
C
=100mA
I
C
=100mA
f
T
t
f
t
S
*
CLASSIFICATION of h
FE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION of
t
S
Rank
Range
A1
2-2.5
A2
2.5-3
B1
3-3.5
B2
3.5-4
A,Apr,2012
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