MCR100-3 … MCR100-8
G
A
K
TO-92 Plastic Package
Weight approx. 0.19g
MAXIMUM RATINGS (T
J
=25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
(T
J
=25 to 125°C, R
GK
=1KΩ)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Forward Current RMS
(All Conduction Angles)
Peak Forward Surge Current, T
A=
25°C
(1/2 Cycle, Sine Wave, 60Hz)
Circuit Fusing (t=8.3ms)
Peak Gate Power - Forward, T
A
=25°C
Average Gate Power - Forward, T
A
=25°C
Peak Gate Current - Forward, T
A
=25°C
(300μs,120PPS)
Peak Gate Voltage - Reverse
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
GF(AV)
I
GFM
V
GRM
T
J
T
s
2
Symbol
Value
100
Unit
V
DRM
and
V
RRM
200
300
400
500
600
0.8
10
0.415
0.1
0.01
1
5
-40 to +125
-40 to +150
Amps
Amps
As
Watts
Watt
Amp
Volts
°C
°C
2
Volts
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
MCR100-3 … MCR100-8
CHARACTERISTICS (T
C
=25°C, R
GK
=1KΩ unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(V
AK
=Rated V
DRM
or V
RRM
)
Forward “On” Voltage
(I
TM
=1A Peak @T
A
=25°C)
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,R
L
=100 Ohms)
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,R
L
=100 Ohms)
(Anode Voltage=Rated V
DRM
,R
L
=100 Ohms)
Holding Current
(Anode Voltage=7Vdc,initiating current=20mA)
Note 1. R
GK
current is not included in measurement
.
I
H
-
5
mA
V
GT
-
0.8
Volts
I
GT
-
200
μA
V
TM
Symbol
I
DRM
,I
RRM
-
-
10
1.7
μA
Volts
Min
Max
Unit
MCR100-3 … MCR100-8
100
Gate Trigger Current
(µA)
90
80
70
60
50
40
30
20
10
-40
-25
-10
5
20
35
50
65
80
95
110
Gate Trigger Voltage (volts)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, Junction Temperature (°C)
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
1000
1000
T
J
, Junction Temperature (°C)
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
Holding Current
(µA)
Latching Current
(µA)
100
100
10
10
-40 -25
-10
5
20
35
50
65
80
95
110
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, Junction Temperature (°C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
T
C
, Maximum Allowable Case
Temperature (°C)
120
T
J
, Junction Temperature (°C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
10
I
T
,Instantaneous On-State
Current (AMPS)
110
100
90
80
70
60
50
40
0
0.1
30°C
0.2
60°C
0.3
90°C
0.4
0.5
180°C
MAXIMUM @ TJ=25°C
MAXIMUM @ TJ=110°C
DC
1
0.1
0.5 0.8
1.1
1.4
1.7
2.0
2.3
2.6
2.9
3.2
3.5
I
T(RMS)
, RMS On-State Current (AMPS)
Figure 5. Typical RMS Current Derating
V
T
, Instantaneous On-State Voltage (volts)
Figure 6. Typical On-State Characteristics
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
