MMBT9014
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
As complementary types the PNP
transistor MMBT9015 is recommended.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
50
45
5
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 1 mA
Symbol
MMBT9014B
MMBT9014C
MMBT9014D
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
f
T
C
OB
NF
Min.
110
200
420
-
-
50
45
5
-
-
100
-
-
Max.
220
450
800
50
50
-
-
-
0.6
1
-
6
10
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
dB
Collector Cutoff Current
at V
CB
= 50 V
Emitter Cutoff Current
at V
EB
= 5 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 5 mA
Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
Noise Figure
at V
CE
= 5 V, I
C
= 200 µA, f = 1 KHz, R
G
= 2 KΩ
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
