2N4402 / 2N4403
PNP Epitaxial Silicon Transistor
General purpose transistor
Collector Emitter Voltage: V
CEO
= 40 V
Collector Dissipation: P
C
(max) = 625 mW
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
Value
40
40
5
600
625
150
-55 to +150
Unit
V
V
V
mA
mW
O
C
C
O
2N4402 / 2N4403
Characteristics at T
amb
=25
O
C
Parameter
DC Current Gain
at -V
CE
=1V, -I
C
=0.1mA
at -V
CE
=1V, -I
C
=1mA
at -V
CE
=1V, -I
C
=10mA
at -V
CE
=1V, -I
C
=150mA
at -V
CE
=2V, -I
C
=500mA
Collector Cutoff Current
at -V
CB
=35V
Emitter Cutoff Current
at -V
EB
=5V
Collector Emitter Breakdown Voltage
at -I
C
=1mA
Collector Base Breakdown Voltage
at -I
C
=100µA
Emitter Base Breakdown Voltage
at -I
E
=100µA
Collector Saturation Voltage
at -I
C
=150mA, -I
B
=15mA
Base Saturation Voltage
at -I
C
=150mA, -I
B
=15mA
Gain Bandwidth Product
at -V
CE
=10V, -I
C
=20mA, f=100MHz
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4403
ST 2N4403
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CEO
-V
(BR)CBO
-V
(BR)EBO
-V
CEsat
-V
BEsat
Min.
30
30
60
50
100
50
100
20
20
-
-
40
40
5
-
0.75
Max.
-
-
-
-
-
150
300
-
-
100
100
-
-
-
0.4
0.95
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
ST 2N4402
ST 2N4403
f
T
f
T
C
CBO
t
on
t
off
150
200
-
-
-
-
-
8.5
35
255
MHz
MHz
pF
ns
ns
Collector Base Capacitance
at -V
CB
=10V, f=140MHz
Turn On Time
at -V
CC
=30V, -V
BE
=2V, -I
C
=150mA, -I
B1
=15mA
Turn Off Time
at -V
CC
=30V, -I
C
=150mA, -I
B1
=-I
B2
=15mA
PCB设计
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