2SA733
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y,
P and L, according to its DC current gain. As
complementary type the NPN transistor ST 2SC945
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
Value
60
50
5
150
250
150
-55 to +150
Unit
V
V
V
mA
mW
O
O
C
C
2SA733
Characteristics at T
amb
=25
o
C
Symbol
DC Current Gain
at -V
CE
=6V, -I
C
=1mA
Current Gain Group R
O
Y
P
L
Collector Base Breakdown Voltage
at -I
C
=100μA
Collector Emitter Breakdown Voltage
at -I
C
=10mA
Emitter Base Breakdown Voltage
at -I
E
=10μA
Collector Cutoff Current
at -V
CB
=60V
Emitter Cutoff Current
at -V
EB
=5V
Collector Saturation Voltage
at -I
C
=100mA, -I
B
=10mA
Base Emitter Voltage
at -V
CE
=6V, -I
C
=1mA
Gain Bandwidth Product
at -V
CE
=6V, -I
C
=10mA
Output Capacitance
at -V
CB
=10V, f=1MHz
Noise Figure
at -V
CE
=6V, -I
C
=0.3mA
at
f=100Hz, R
S
=10KΩ
F
-
6
20
dB
C
OB
-
2.8
-
pF
f
T
50
180
-
MHz
-V
BE(on)
0.5
0.62
0.8
V
-V
CE(sat)
-
0.18
0.3
V
-I
EBO
-
-
0.1
μA
-I
CBO
-
-
0.1
μA
-V
(BR)EBO
5
-
-
V
-V
(BR)CEO
50
-
-
V
-V
(BR)CBO
60
-
-
V
h
FE
h
FE
h
FE
h
FE
h
FE
40
70
120
200
350
-
-
-
-
-
80
140
240
400
700
-
-
-
-
-
Min.
Typ.
Max.
Unit
stm32/stm8
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