DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SA1213
TRANSISTOR (PNP)
1. BASE
FEATURES
Complementary to 2SC2873
Small Flat Package
Power Amplifier and Switching Applications
Low Saturation Voltage
High Speed Switching Time
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Test conditions
I
C
= -0.1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-2A
I
C
=-1A,I
B
=-50mA
I
C
=-1A,I
B
=-50mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-2V,I
C
= -0.5A
100
40
70
20
-0.5
-1.2
V
V
pF
MHz
Min
-50
-50
-5
-100
-100
240
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF h
FE
RANK
RANGE
MARKING
O
70–140
NO
Y
120–240
NY
Typical Characterisitics
Static Characteristic
-1000
1000
2SA1213
h
FE
——
I
C
COMMON EMITTER
V
CE
=-2V
-6mA
(mA)
-5.4mA
-800
COMMON
EMITTER
T
a
=25
℃
-4.8mA
-4.2mA
300
I
C
T
a
=100
℃
COLLECTOR CURRENT
-600
-3.6mA
-3mA
-2.4mA
h
FE
DC CURRENT GAIN
T
a
=25
℃
100
-400
-1.8mA
-200
-1.2mA
I
B
=-600uA
30
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-1
-3
-10
-30
-100
-500
-1000
-2000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
BEsat
——
I
C
-1000
V
CEsat
——
I
C
BASE-EMMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
COLLECTOR-EMMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-300
T
a
=100
℃
-100
T
a
=100
℃
-30
T
a
=25
℃
β=20
-200
-1
-3
-10
-30
-100
-300
-1000
-10
-1
β=20
-3
-10
-30
-100
-300
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-1000
I
C
——
V
BE
1000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
-300
(mA)
T
a
=25
℃
300
I
C
-100
(pF)
COLLECTOR CURRENT
T
a
=100
℃
-30
C
ib
100
T
a
=25
℃
-10
CAPACITANCE
C
C
ob
30
-3
-1
-0.0
V
CE
=-2V
-0.2
-0.4
-0.6
-0.8
-1.0
10
-0.1
-0.3
-1
-3
-10
-20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
