NJ7N60 POWER MOSFET
7.4A 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ7N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* V
DS
= 600V
ID = 7.4A
*
RDS(ON) = 1.0
ohm@VGS
= 10V (7N60)
*
RDS(ON) = 1.2
ohm@VGS
= 10V (7N60-F/7N60-A/7N60-D /7N60-L)
*
Ultra Low Gate Charge (Typical 29 nC )
*
Low Reverse Transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy specified
*Improved
dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ7N60-LI
NJ7N60-BL
NJ7N60F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ7N60 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
Power Dissipation
TO-220F
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
RATINGS
600
±30
7.4
7.4
29.6
530
14.2
4.5
142
48
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
4. I
SD
7.4A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
JA
JC
RATINGS
62.5
0.88
2.6
UNIT
°C/W
°C/W
NJ7N60 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Gate- Source Leakage Current
SYMBOL
BV
DSS
I
DSS
I
GSS
BV
DSS
V
GS(TH)
TEST CONDITIONS
V
GS
= 0V, I
D
= 250 A
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
T
J
I
D
=250 A,Referenced to 25°C
V
DS
= V
GS
, I
D
= 250 A
7N60
7N60-F
V
GS
= 10V,
7N60-M
I
D
= 3.7A
7N60-Q
7N60-R
MIN TYP MAX UNIT
600
V
1
A
100 nA
-100 nA
0.67
V/°C
4.0
1.0
1.2
1.2
1.2
1.2
1400
180
21
70
170
140
130
29
7
14.5
38
V
2.0
0.83
0.93
0.93
0.93
0.93
Static Drain-Source On-State Resistance
R
DS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=7.4A,
R
G
=25 (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=480V, I
D
=7.4A,
Gate-Source Charge
Q
GS
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 7.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 7.4 A,
dI
F
/ dt = 100A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
16
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
1.4
7.4
29.6
320
2.4
CLASSIFICATION OF R
DS(ON)
RANK
VALUE
-
1.0
F
1.2
A
1.2
D
1.2
L
1.2
NJ7N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ7N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DS
V
GS
R
G
V
DD
10V
Pulse Width 1 s
Duty Factor 0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
12V
0.2μF
50k
0.3μF
Same
Type as
D.U.T.
V
DS
V
GS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
PCB设计
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