NJ2N60 POWER MOSFET
2.0A 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The
NJ
2N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
1
FEATURES
* R
DS(ON)
= 5 @V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ2N60-LI
NJ2N60-BL
NJ2N60F-LI
NJ2N60A-LI
NJ2N60D-TR
NJ2N60D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ2N60 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25° , unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
2N60
Single Pulsed
(Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
TO-251
Power Dissipation
TO-252
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
RATINGS
600
±30
2.0
2.0
8.0
140
4.5
4.5
54
22
40
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
P
D
T
C
= 25°
Junction Temperature
T
J
+150
°
Operating Temperature
T
OPR
-55 ~ +150
°
Storage Temperature
T
STG
-55 ~ +150
°
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25 , Starting T
J
= 25°C
4. I
SD
2.4A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220
TO-220F
TO-251
TO-252
SYMBOL
RATINGS
62.5
62.5
100
UNIT
° /W
° /W
° /W
Junction to Ambient
JA
Junction to Case
TO-220
TO-220F
TO-251
TO-252
2.32
5.5
Jc
° /W
° /W
° /W
2.87
NJ2N60 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25° , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
2N60
Static Drain-Source On-State
Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2N60
Turn-On Rise Time
Gate-Source Leakage Current
Turn-Off Delay Time
Turn-Off Fall Time
2N60
SYMBOL
BV
DSS
I
DSS
I
GSS
BV
DSS
/
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
V
10
A
100 nA
-100 nA
V/°
4.0
5
V
V
GS
= 0V, I
D
= 250 A
600
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
T
J
I
D
=250 A, Referenced to 25°C
V
DS
= V
GS
, I
D
= 250 A
V
GS
= 10V, I
D
=1A
2.0
0.4
3.6
C
ISS
C
OSS
C
RSS
t
D (ON)
t
R
t
D(OFF)
t
F
V
DS
=25V, V
GS
=0V,
f =1MHz
270
40
5
10
40
350
50
7
30
60
50
60
11
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
V
DD
=300V, I
D
=2.4A,
R
G
=25 (Note 1, 2)
20
50
9.0
1.6
4.3
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
1.4
2.0
8.0
180
0.72
NJ2N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
DD
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
GS
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
=
10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ2N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
Microchip MCU
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