NJ5N65 POWER MOSFET
5.0A 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The
NJ5N65
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
FEATURES
* V
DS
= 650V
* I
D
=
5.0A
* R
DS(ON)
=2.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical
15nC)
* Low reverse transfer capacitance (C
RSS
= typical
6.5
pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ5N65-LI
NJ5N65-BL
NJ5N65F-LI
NJ5N65A-LI
NJ5N65D-TR
NJ5N65D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ5N65 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
Avalanche Energy
TO-251 / TO-252
unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
RATINGS
650
±30
4.5
4.5
18
210
10
4.5
100
36
54
UNIT
V
V
A
A
A
mJ
V/ns
W
Junction Temperature
T
J
+150
Operation Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 18.9mH, I
AS
= 4.5 A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25
4. I
SD
4.5A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25
THERMAL DATA
PARAMETER
TO-220
TO-220F
TO-251 / TO-252
TO-220
TO-220F
TO-251 / TO-252
SYMBOL
JA
Junction to Ambient
Junction to Case
JC
RATINGS
62.5
62.5
160
1.25
3.47
2.3
UNIT
°C/W
°C/W
NJ5N65 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
= 250 A
V
DS
=650V, V
GS
= 0V
V
GS
=30V, V
DS
= 0V
V
GS
=-30V, V
DS
= 0V
MIN TYP MAX UNIT
650
1
100
-100
0.6
V
A
nA
V/
Breakdown Voltage Temperature
BV
DSS
/ T
J
I
D
=250 A, Referenced to 25
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250 A
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.25A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 325V, I
D
=4.5 A,
Turn-On Rise Time
t
R
R
G
= 25 (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 520 V, I
D
= 4.5A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.5 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 4.5 A,
d
IF
/ dt = 100 A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Note 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
2.0
2.0
515
55
6.5
10
42
38
46
15
2.5
6.6
4.0
2.5
670
72
8.5
30
90
85
100
19
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
1.4
4.5
18
300
2.2
NJ5N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ5N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
I
D(t)
10V
t
p
t
p
Time
V
DD
D.U.T.
V
DS(t)
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
嵌入式系统
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