NJ8N65 POWER MOSFET
8.0A 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ8N65 is a high voltage and high current power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used
in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge circuits.
1
FEATURES
* V
DS
= 650V
* I
D
=
8.0A
*
RDS(ON) = 1.4
ohm@VGS
= 10 V
* Ultra Low gate charge (typical
28nC)
* Low reverse transfer capacitance (C
RSS
= typical
12.0
pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-220
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ8N65-LI
NJ8N65-BL
NJ8N65F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ8N65 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
8
A
8
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
32
A
230
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
147
W
TO-220
Power Dissipation
P
D
TO-220F
48
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 7.1mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
4. I
SD
8A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
JA
JC
RATING
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
NJ8N65 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°C
4.0
1.4
V
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 4A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 325V, I
D
=8A,
Turn-On Rise Time
t
R
R
G
= 25
Turn-Off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 520V,I
D
=8A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=8A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
=8A,
dI
F
/dt = 100 A/μs (Note 2)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
V
GS
= 0 V, I
D
= 250 A
650
V
DS
= 650 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
I
GSS
V
GS
= -30 V, V
DS
= 0 V
BV
DSS
/ T
J
I
D
=250 A,Referenced to 25°C
2.0
0.7
1.0
965 1255
105 135
12
16
16.5 45
60.5 130
81 170
64.5 140
28
36
4.5
12
1.4
8
32
365
3.4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
NJ8N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ8N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DS
V
GS
R
G
10%
t
D(ON)
t
R
t
D(OFF)
t
F
V
DS
V
DD
90%
10V
D.U.T.
V
GS
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
DSP 与 ARM 处理器
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