1N4148W
Silicon Epitaxial Planar Switching Diode
Features
• SOD-123 package
• Fast switching
• These diodes are also available in other case
style including the DO-35 case with the type
designation 1N4148, the MiniMELF case with the
type designation LL4148 and the MicroMELF case
with the type designation MCL4148.
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W1
Top View
Marking Code: "W1"
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current at t = 1
μs
Power Dissipation
Thermal Resistance from Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FSM
P
tot
R
θJA
T
j
T
stg
Value
100
75
150
2
400
312
150
- 65 to + 150
Unit
V
V
mA
A
mW
O
C/W
O
C
C
O
Electrical Characteristics (T
a
= 25
O
C)
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
J
= 150
O
C
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
Max.
1
Unit
V
I
R
25
5
50
4
4
nA
µA
µA
pF
ns
C
tot
t
rr
1N4148W
Forward characteristics
V
RF
=2V
10
3
2nF
60
5K
~
~
~
Vo
2
10
I
F (
m
A)
10
1
10
-2
10
-1
0
Tj=100 C
Rectification Efficiency Measurement Circuit
Tj=25 C
1
2
V
F (V)
Amissible power dissipation
vs. ambient temperature
1000
10
4
5
2
3
Leakage current vs. junction temperature
800
10
5
P
tot (mW)
I
R (nA)
600
10
5
2
2
400
2
200
10
5
2
V
R
=20V
0
100
Tj ( C)
200
0
1
100
Tamb ( C)
200
Reverse capacitance vs. reverse voltage
Tj=25 C
f=1MHz
Amissible repetitive peak forward current vs. pulse duration
100
5
4
3
2
1.1
1.0
C
tot (
V
R)
C
tot (0 V)
10
I
FRM
(A)
0.9
5
4
3
2
V=0
0.1
0.2
0.5
0.8
1
5
4
3
2
0.7
0
2
4
6
8
10
V
R (V)
0.1
10
-5 2
5
-4
10
2
5
10
-3 2
5
10
-2 2
5
-1
10
2
5
1
2
5
10
t
p
(s)
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