NJ8N80 POWER MOSFET
8.0A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ8N80 is an N-channel mode power MOSFET, it uses
advanced technology to provide costumers planar stripe and DMOS
technology. This technology allows a minimum on-state resistance,
superior switching performance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The NJ8N80 is generally
applied in high efficiency switch mode power supplies.
1
FEATURES
* V
DS
=
800V ID = 8.0A
*
ypically 35 nC Low Gate Charge
* R
DS(ON)
=1.45Ω@V
GS
= 10V.
*
Typically 13 pF Low CRSS
*
Improved dv/dt Capability
* Fast switching capability
* Avalanche energy specified
*
RoHS–Compliant Product
TO-220
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ8N80-LI
NJ8N80-BL
NJ8N80F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ8N80 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) (T
C
=25°C)
Drain Current (Pulsed) (Note 1)
Avalanche Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
TO-220
TO-220F
Power Dissipation
TO-220
TO-220F
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
RATINGS
800
±30
8
32
8
850
17.8
4.5
178
59
1.43
0.47
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
P
D
Linear Derating Factor above
T
C
=25°C
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
3. I
SD
8A, di/dt 200A/μs, V
DD
BV
DSS
, Starting T
J
= 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
JA
JC
RATINGS
62.5
0.7
2.1
UNIT
°C/W
°C/W
NJ8N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
800
0.5
10
100
±100
3.0
5.0
1.18 1.45
5.6
1580 2050
135 175
13
17
35
10
14
40
110
65
70
45
TYP MAX UNIT
V
V/°C
μA
nA
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
Forward Transconductance (Note 1)
g
FS
V
DS
=50V, I
D
=4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 1, Note 2)
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V,
Gate to Source Charge
Q
GS
I
D
=8A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=8A,
R
G
=25
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
Reverse Recovery Time (Note 1)
t
rr
I
S
=8A, V
GS
=0V,
dI
F
/dt=100A/μs
Reverse Recovery Charge (Note 1)
Q
RR
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
BV
DSS
I
D
=250μA, V
GS
=0V
BV
DSS
/ T
J
Reference to 25°C, I
D
=250μA
V
DS
=800V, V
GS
=0V
I
DSS
V
DS
=640V, T
C
=125°C
I
GSS
V
GS
=±30V, V
DS
=0V
90
230
140
150
8
32
1.4
690
8.2
A
A
V
ns
μC
NJ8N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
NJ8N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
GS
Same Type
as DUT
12V
200nF
50k
V
GS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
300nF
V
DS
Q
GS
Q
GD
Q
G
10V
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
BV
DSS
L
10V
t
P
DUT
V
DD
V
DD
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
I
D
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
嵌入式系统
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