NJ7N80 POWER MOSFET
7.0A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ7N80 is an N-channel mode power MOSFET using
advanced technology to provide customers with planar stripe and DMOS
technology. This technology specializes in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The NJ7N80 is universally applied in high efficiency switch mode power supply.
FEATURES
* V
DS
=
800V
* I
D
=
7.0A
*
RDS(on)=1.8
ohm@VGS
=10V
*
High switching speed
*
100% avalanche tested
1
TO-220
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ7N80-LI
NJ7N80-BL
NJ7N80F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ7N80 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed (Note 1)
Single Pulsed (Note 2)
Avalanche Energy
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
TO-220
Power Dissipation
TO-220F
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
RATINGS
800
±30
7
26.4
580
16.7
4.5
142
52
UNIT
V
V
A
A
mJ
mJ
V/ns
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=25mH, I
AS
=6.6A, V
DD
= 50V, R
G
=25 , Starting T
J
=25°C
3. I
SD
8A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
JA
JC
RATINGS
62.5
0.88
2.4
UNIT
°C/W
°C/W
NJ7N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
MIN
800
0.93
10
100
100
-100
3.0
1.4
5.5
5.0
1.8
TYP
MAX
UNIT
V
V/°C
μA
μA
nA
nA
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
BV
DSS
V
GS
=0V, I
D
=250μA
BV
DSS
/ T
J
I
D
=250 A,Referenced to 25°C
V
DS
=800V, V
GS
=0V
I
DSS
V
DS
=640V, T
C
=125°C
V
DS
=0V ,V
GS
=30V
I
GSS
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.3A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3.3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V, I
D
=6.6A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=6.6A, R
G
=25
(Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6.6A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=6.6A,
dI
F
/dt=100A/ s (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
1290 1680
120
155
10
13
27
8.2
11
35
100
50
60
35
80
210
110
130
6.6
26.4
1.4
650
7.0
NJ7N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
V
GS
Same Type
as DUT
12V
200nF
50k
V
GS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
300nF
V
DS
Q
GS
Q
GD
Q
G
10V
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
BV
DSS
L
10V
t
P
DUT
V
DD
V
DD
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
I
D
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
NJ7N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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