9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, A, B,
C and D, according to its DC current gain. As
complementary type the NPN transistor ST 9014
is recommended.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
Value
50
45
5
100
450
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 1 mA
Current Gain Group
Symbol
A
B
C
D
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
C
OB
Min.
60
100
200
400
-
-
50
45
5
-
-
100
-
Max.
150
300
600
800
50
50
-
-
-
0.65
1
-
7
Unit
-
-
-
Collector Base Cutoff Current
at -V
CB
= 50 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 5 mA
Base Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 5 mA
Gain Bandwidth Product
at -V
CE
= 10 V, -I
C
= 10 mA
Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
nA
nA
V
V
V
V
V
MHz
pF
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