DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
MMBTA06
TRANSISTOR (NPN)
SOT–23
FEATURES
For Switching and Amplifier Applications
Complementary Type PNP Transistor MMBTA56
MARKING: 1GM
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
4
500
300
416
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=80V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=2V,I
C
=10mA, f=100MHz
100
100
100
0.25
1.2
V
V
MHz
Min
80
80
4
0.1
0.1
0.1
400
Typ
Max
Unit
V
V
V
µA
µA
µA
A,Oct,2010
Typical Characterisitics
90
80
MMBTA06
h
FE
—— I
C
V
CE
=1V
T
a
=100 C
o
Static Characteristic
500uA
450uA
400uA
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
500
(mA)
I
C
70
60
350uA
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
COLLECTOR CURRENT
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
9
10
T
a
=25 C
100
o
20
1
10
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1
V
CEsat
—— I
C
β=10
10
V
BEsat
——
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.1
T
a
=100
℃
T
a
=25
℃
1
T
a
=25
℃
T
a
=100
℃
0.01
1
10
100
500
0.1
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
V
BE
——
I
C
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
COLLECTOR CURRENT
C
10
o
(pF)
T
a
=25 C
100
o
CAPACITANCE
C
ib
C
T=
a
25
℃
T=
a
10
0
1
10
C
ob
0.1
0.0
V
CE
=1V
0.3
0.6
0.9
1.2
1
0.1
1
10
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
——
I
C
0.4
P
c
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
c
(W)
V
CE
=2V
T
a
=25 C
o
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
10
3
10
70
0.0
0
25
50
75
100
125
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Oct,2010
150
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