PPJL9812
30V Dual N-Channel Enhancement Mode MOSFET
Voltage
Features
30 V
Current
6A
SOP-8
RDS(ON) , VGS@10V, ID@6A<35mΩ
RDS(ON) , VGS@4.5V, ID@4A<40mΩ
RDS(ON) , VGS@2.5V, ID@2A<54mΩ
Advanced Trench Process Technology
ESD Protected 2KV HBM
High density cell design for ultra low on-resistance
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOP-8 package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0029 ounces, 0.083 grams
Marking: L9812
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 1)
SYMBOL
V
DS
V
GS
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
P
D
T
J
,T
STG
R
θJA
I
D
I
DM
LIMIT
UNITS
V
V
A
30
+12
6
4.8
24
2
1.3
-55~150
62.5
o
A
W
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient, t≦10s
(Note 5)
C
C/W
July 27,2015-REV.00
Page 1
PPJL9812
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=6.0A, V
GS
=0V
-
-
-
0.86
6
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=15V, I
D
=6.0A,
V
GS
=4.5V
(Note 1,2)
V
DS
=15V, V
GS
=0V,
f=200KHZ
V
DD
=15V, I
D
=1.0A,
V
GS
=10V,
R
G
=3Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=6.0A
V
GS
=4.5V,I
D
=4.0A
V
GS
=2.5V,I
D
=2.0A
V
DS
=30V,V
GS
=0V
V
GS
=+12V,V
DS
=0V
MIN.
30
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.8
30
33
41
-
-
5.1
0.8
1.4
421
43
35
3.3
24
19
16
MAX.
-
1.3
35
40
54
1
+10
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
uA
nC
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
6. Guaranteed by design, not subject to production testing.
July 27,2015-REV.00
Page 2
PPJL9812
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
July 27,2015-REV.00
Page 3
PPJL9812
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
July 27,2015-REV.00
Page 4
PPJL9812
PART NO PACKING CODE VERSION
Part No Packing Code
PJL9812_R2_00001
Package Type
SOP-8
Packing type
2.5K pcs / 13” reel
Marking
L9812
Version
Halogen free
Packaging Information & Mounting Pad Layout
SOP-8 Dimension
SOP-8 PAD LATOUT
Unit: mm
Unit: mm
July 27,2015-REV.00
Page 5
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