UM2301
20V P-Channel Power MOSFET
UM2301S SOT23-3
UM2301P SOT323
General Description
The UM2301 is a low threshold P-channel MOSFET, have extremely low on-resistance. This
benefit provides the designer with an extremely efficient device for use in battery and load
management applications. The device uses a space-saving, small-outline SOT23-3 or SOT323
package.
Applications
Battery Packs
Battery-powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage(max)：-20V
Low On-Resistance：
200mΩ@V
GS
=-4.5V
250mΩ@V
GS
=-2.5V
Continuous Drain Current(max)：
-1.5A@25℃(SOT23-3)
-1.1A@25℃(SOT323)
Pin Configurations
Top View
G
1
3
D
S
2
M: Month Code
XXX: UM2301S 10A
UM2301P VLD
Ordering Information
Part Number
UM2301S
UM2301P
Packaging Type
SOT23-3
SOT323
Marking Code
10A
VLD
Shipping Qty
3000pcs/7 Inch
Tape & Reel
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DP
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain Current (5s)
Drain Current Pulsed
SOT23-3
SOT323
Value
-20
±8
-1.5
-1.1
-5
Units
V
V
A
A
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UM2301
P
D
T
J
Tstg
R
θJA
ESD
(Pulse Width
≤
10μs, Duty Cycle
≤
1%)
SOT23-3
Power Dissipation
SOT323
Junction Temperature
Storage Temperature
Thermal Resistance,
SOT23-3
Junction-to-Ambient (≤5s)
SOT323
ESD Method 3015.8
0.86
0.5
-55~150
-55~150
145
250
2000
W
℃
℃
℃/W
V
Electrical Characteristics (T
J
=25
℃
, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain to Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate-to-Source
Leakage Current
Static
Drain-to-Source
On-Resistance
a
Gate-Source
Threshold Voltage
Forward
Transconductance
a
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Forward Diode
Voltage
V
DD
=-10V, R
L
=10Ω,
I
D
=-1A, V
GEN
=-4.5V,
R
G
=1Ω
V
GS
=0V, V
DS
=-10V,
f=1.0MHz
V
GS
=0V, I
D
=-250μA
V
DS
=-20V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
-20
-0.1
±10
V
μA
μA
On Characteristics
R
DS(ON)
V
GS(TH)
g
fs
V
GS
=-4.5V, I
D
=-1.0A
V
GS
=-2.5V, I
D
=-1.0A
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-5V, I
D
=-2.0A
-0.4
200
250
-0.6
4.5
350
400
-1
mΩ
V
S
Dynamic Characteristics
b
Ciss
Coss
Crss
405
150
55
pF
Switching Characteristics
b
td(on)
tr
td(off)
tf
11
35
80
50
20
60
150
90
ns
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
I
S
=-0.7A
-0.8
-1.2
V
a: Pulse test: pulse width
≤
300μs, duty cycle
≤
2%.
b: Guaranteed by design, not subject to production testing.
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UM2301
Typical Characteristics (T
J
=25℃, Unless otherwise noted)
Output Characteristics
5000
4500
-ID,Drain Current (mA)
4000
3500
3000
2500
2000
1500
1000
500
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS,Drain-to-source Voltage (V)
0
0
Vgs=-1.2V
Vgs=-1.5V
Vgs=-3.0V
Vgs=-4.0V
Vgs=-5.0V
Vgs=-2.0V
Transfer Characteristics
3000
2500
-ID,Drain Current (mA)
2000
1500
1000
500
TA=-40
℃
TA=25
℃
TA=125
℃
1
2
-VGS,Gate-to-Source Voltage (V)
3
Source-Drain Diode Forward Voltage
25C
On Resistance vs. Drain Current
430
RDS(on) -On Resistance (m
Ω
)
410
390
370
350
330
310
290
270
250
230
210
0
1
2
3
4
5
6
ID - Drain Current (A)
Vgs=-2.5V
Vgs=-4.5V
1100
1000
ID - Drain Current (mA)
900
800
700
600
500
400
300
200
100
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VDS - Drain-Source Voltage (V)
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UM2301
Typical Characteristics (T
J
=25℃, Unless otherwise noted)
On-Resistance vs. Gate-to-Source Voltage
600
RDS(on) - On-Resistance (m
Ω
)
500
400
300
200
100
IDS=-1.0A
TA=-40
℃
TA=25
℃
TA=125
℃
On-Resistance vs. Ambient Temperature
400
RDS(on) - On-Resistance (m
Ω
)
Vgs=-2.5V
360
320
280
240
200
160
Vgs=-4.5V
IDS=-1.0A
0
0
1
2
3
4
5
6
-VGS,Gate-to-Source Voltage (V)
-50
-25
0
25
50
75
100
125
TA-Ambient Temperature (
℃
)
Threshold Voltage vs. Ambient
Temperature
0.2
IDS=-250uA
VGS(th) Variance (V)
0.1
0
-0.1
-0.2
-0.3
-50
-25
0
25
50
75
IDS=-1mA
100 125 150
TA - Ambient Temperature - (
℃
)
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UM2301
Package Information
UM2301S SOT23-3
Outline Drawing
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.550REF
0.300
0.600
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.022REF
0.012 0.024
0°
8°
Land Pattern
NOTES:
1. Compound dimension: 2.92×1.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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PCB设计
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