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NE21903: 产品描述C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; 产品类别半导体分立半导体; 文件大小555KB，共12页; 制造商NEC ( Renesas ); 官网地址https://www2.renesas.cn/zh-cn/

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NE21903概述

C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

NE21903规格参数

参数名称	属性值
最大集电极电流	0.0800 A
最大集电极发射极电压	10 V
端子数量	4
加工封装描述	0.100 INCH, DB-4
状态	Active
最大集电极基极电容	1 pF
结构	SINGLE
最小直流放大倍数	30
最高频带	C BAND
jesd_30_code	O-CRDB-F4
元件数量	1
最大工作温度	200 Cel
包装材料	CERAMIC, METAL-SEALED COFIRED
包装形状	ROUND
包装尺寸	DISK BUTTON
larity_channel_type	NPN
wer_dissipation_max__abs_	0.5800 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
表面贴装	YES
端子涂层	NOT SPECIFIED
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
额定交叉频率	8000 MHz

NE21903相似产品对比

	NE21903	NE219	NE21908	NE21912	NE21935	NE21937	NE21987	2SC2218	2SC22174	2SC2367
描述	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
最大集电极电流	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A
最大集电极发射极电压	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
端子数量	4	4	4	4	4	4	4	4	4	4
加工封装描述	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4
状态	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active
最大集电极基极电容	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF
结构	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流放大倍数	30	30	30	30	30	30	30	30	30	30
最高频带	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
jesd_30_code	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4
元件数量	1	1	1	1	1	1	1	1	1	1
最大工作温度	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel
包装材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
包装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
包装尺寸	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
larity_channel_type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
wer_dissipation_max__abs_	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子涂层	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
额定交叉频率	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz

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