PPJE8403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@-4.5V, ID@-0.6A<340mΩ
RDS(ON) , VGS@-2.5V, ID@-0.4A<420mΩ
RDS(ON) , VGS@-1.8V, ID@-0.2A<600mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
-20 V
Current
-0.6A
SOT-523
Unit : inch(mm)
(Halogen Free)
Mechanical Data
Case: SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Marking: E03
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
mW
mW/
o
C
o
-20
+8
-0.6
-2.4
300
2.4
-55~150
417
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
January 22,2015-REV.01
Page 1
PPJE8403
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-0.6A
Drain-Source On-State Resistance
V
GS
=-2.5V, I
D
=-0.4A
V
GS
=-1.8V, I
D
=-0.2A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1A, V
GS
=0V
-
-
-
-0.95
-0.4
-1.2
A
V
V
DD
=-10V, I
D
=-0.6A,
V
GS
=-4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
9
37
128
72
-
-
-
-
ns
V
DS
=-10V, I
D
=-0.6A,
V
GS
=-4.5V
(Note 1,2)
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
2.2
0.4
0.5
151
27
9
-
-
-
-
-
-
pF
nC
V
DS
=-20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
-20
-0.4
-
-
-
-
-
-
-0.64
280
330
420
-0.01
+3.5
-
-1.0
340
420
600
-1
+10
uA
uA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
January 22,2015-REV.01
Page 2
PPJE8403
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
January 22,2015-REV.01
Page 3
PPJE8403
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature
Fig.9 Capacitance vs. Drain-Source Voltage
January 22,2015-REV.01
Page 4
PPJE8403
PART NO PACKING CODE VERSION
Part No Packing Code
PJE8403_R1_00001
Package Type
SOT-523
Packing type
4K pcs / 7” reel
Marking
E03
Version
Halogen free
MOUNTING PAD LAYOUT
January 22,2015-REV.01
Page 5
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
