PPJC7438
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@10V, ID@500mA<1.45Ω
RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω
RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω
RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω(typ.)
Advanced Trench Process Technology
ESD Protected 2KV HBM
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. (Halogen Free)
50 V
Current
400mA
SOT-323
Unit: inch(mm)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C38
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
mA
mA
mW
mW/
o
C
o
o
LIMIT
50
+20
400
1200
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 17,2015-REV.00
Page 1
PPJC7438
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=500mA
Drain-Source On-State Resistance
R
DS(on)
V
GS
=4.5V,I
D
=200mA
V
GS
=2.5V,I
D
=100mA
V
GS
=1.8V,I
D
=10mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=500mA, V
GS
=0V
-
-
-
0.9
500
1.5
mA
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=25V, I
D
=500mA,
V
GS
=4.5V
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DD
=25V, I
D
=500mA,
V
GS
=10V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
0.95
0.34
0.32
36
11
6.6
2.3
20
7
20
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
I
DSS
I
GSS
V
DS
=50V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
50
0.5
-
-
-
-
-
-
-
0.86
1.2
1.3
1.7
4.0
-
-
-
1.0
1.45
1.95
4.0
-
1
+10
uA
uA
Ω
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing.
June 17,2015-REV.00
Page 2
PPJC7438
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
June 17,2015-REV.00
Page 3
PPJC7438
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
June 17,2015-REV.00
Page 4
PPJC7438
PART NO PACKING CODE VERSION
Part No Packing Code
PJC7438_R1_00001
PJC7438_R2_00001
Package Type
SOT-323
SOT-323
Packing type
3K pcs / 7” reel
12K pcs / 13” reel
Marking
C38
C38
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
June 17,2015-REV.00
Page 5
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