PPJP7NA80
/ PJF7NA80
800V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@ 3.5A<1.55Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
ITO-220AB-F
TO-220AB
800 V
Current
7A
(Halogen Free)
Mechanical Data
Case: TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
154
1.23
-55~150
TO-220AB
ITO-220AB-F
o
UNITS
V
V
A
A
mJ
800
+30
7
28
534
50
0.4
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
0.81
62.5
2.5
120
o
C/W
Limited only By Maximum Junction Temperature
March 10,2014-REV.00
Page 1
PPJP7NA80
/ PJF7NA80
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
trr
Qrr
---
---
V
GS
=0V, I
S
=7A
dI
F
/ dt=100A/us
(Note 2)
-
-
-
-
-
-
590
4
7
28
-
-
A
A
ns
uC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=640V, I
D
=7A,
V
GS
=10V
(Note 2,3)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
V
DD
=400V, I
D
=7A,
R
G
=25Ω
(Note 2,3)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
SD
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=3.5A
V
DS
=800V,V
GS
=0V
V
GS
=+30V,V
DS
=0V
I
S
=7A,V
GS
=0V
MIN.
800
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
3
1.39
0.01
+10
0.87
23
7
9
1082
128
6
34
72
63
35
MAX.
-
4
1.55
1
+100
1.4
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
uA
nA
V
nC
pF
ns
NOTES :
1. L=30mH, I
AS
=5.85A, V
DD
=50V, R
G
=20 ohm, Starting T
J
=25
o
C
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
March 10,2014-REV.00
Page 2
PPJP7NA80
/ PJF7NA80
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistsnce vs. Junction temperature
Fig.5 Capacitance vs. Drain-Source Voltage
Fig.6 Body Dlode Characterlslcs
March 10,2014-REV.00
Page 3
PPJP7NA80
/ PJF7NA80
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8
Breakdown Voltage Variation vs.Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Maximum Safe Operating Area
Fig.11 Maximum Safe Operating Area
March 10,2014-REV.00
Page 4
PPJP7NA80
/ PJF7NA80
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJP7NA80 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJF7NA80 Normalized Transient Thermal Impedance vs. Pulse Width
March 10,2014-REV.00
Page 5
stm32/stm8
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