PPJU50N10L
/ PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@30A<22mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-252
TO-251AB
100 V
Current
50 A
(Halogen Free)
Mechanical Data
Case : TO-251AB, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
LIMIT
UNITS
V
V
A
100
+20
50
32
100
96
38
8
6.5
2.5
1.6
80
-55~150
1.3
50
(Note 1)
o
W
A
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case
Junction to Ambient
C
C/W
Limited only By Maximum Junction Temperature
April 9,2015-REV.00
Page 1
PPJU50N10L
/ PJD50N10L
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
SD
trr
Qrr
---
I
S
=1A,V
GS
=0V
V
GS
=0V, I
S
=20A
dI
F
/ dt=100A/us
(Note 2)
-
-
-
-
-
0.67
31
38
50
1.0
-
-
A
V
ns
uC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=50V, I
D
=30A,
V
GS
=10V
(Note 2,3)
V
DS
=15V, V
GS
=0V,
f=1.0MHZ
V
DD
=50V, I
D
=30A,
V
GS
=10V, R
G
=3Ω
(Note 2,3)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=30A
V
DS
=80V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
MIN.
100
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
3.57
18.3
0.01
+10
29
9.5
10
1643
257
63
19
56
25
13
MAX.
-
4.5
22
1.0
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
pF
ns
NOTES :
1. The test by surface mounted on 1 inch FR4 board with 2oz copper.
2. L=0.1mH, I
AS
=40A, V
DD
=25V, V
GS
=10V, R
G
=25ohm, Starting T
J
=25
o
C
3.
4.
5.
The Power dissipation is limit by 150℃ junction temperature.
Pulse width<300us, Duty cycle<2%
Guaranteed by design, not subject to production testing
April 9,2015-REV.00
Page 2
PPJU50N10L
/ PJD50N10L
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistsnce vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Source-Drain Diode Forward Voltage
April 9,2015-REV.00
Page 3
PPJU50N10L
/ PJD50N10L
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8
Breakdown Voltage Variation vs. Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
April 9,2015-REV.00
Page 4
PPJU50N10L
/ PJD50N10L
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
April 9,2015-REV.00
Page 5
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