P2N3904N
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage
Features
40V
Current
0.2A
Silicon NPN, Planar design
Low Vce(sat) 0.2V(max)@Ic/Ib= 10mA/1mA
High collector current capability
Excellent DC current gain characteristics
Lead free in compliance with EU RoHS 2011/65/EU
directive.
1
1
TO-92 AMMO
TO-92
3
COLLECTOR
Green molding compound as per IEC61249 Std.
(Halogen Free)
2
BASE
Mechanical Data
1
EMMTER
Case: TO-92 and TO-92 AMMO Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.007 ounces, 0.196 grams
Marking: 2N3904N
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Typical Thermal Resistance from Junction to Ambient
(Note )
Note: Limited only By Maximum Junction Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
V
A
A
mW
o
o
60
40
6
0.2
0.4
625
-55~150
200
C
C/W
September 1,2015-REV.01
Page 1
P2N3904N
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
ON characteristics
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
DC Current Gain
h
FE
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, V
CE
= 20V
f=100MHz
V
CB
= 5V, I
E
= 0A,
f=1MHz
V
EB
= 0.5V, I
C
= 0A,
f=1MHz
Vcc=3V, V
BE
= -0.5V
Ic= 10mA, I
B
= 1mA
Vcc=3V, Ic= 10mA
I
B1
= I
B2
=1mA
40
70
100
60
30
-
-
0.65
-
300
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-
200
300
0.85
0.95
-
V
mV
-
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
CES
I
C
= 1mA, I
B
= 0A
I
C
= 0.01mA, I
E
= 0A
I
E
= 0.01mA, I
C
= 0A
V
CB
= 30V, I
E
= 0A
V
EB
= 3V
V
CES
= 30V
40
60
6
-
-
-
-
-
-
-
-
-
-
-
-
50
50
50
V
V
V
nA
nA
nA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
Base-Emitter Saturation voltage
V
BE(SAT)
Transition Frequency
f
T
MHz
Collector-Base Capacitance
Ccbo
-
-
4
pF
Emitter-Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cebo
Td
Tr
Ts
Tf
-
-
-
-
-
-
-
-
-
-
8
35
35
200
50
pF
nS
nS
nS
nS
September 1,2015-REV.01
Page 2
P2N3904N
TYPICAL CHARACTERISTIC CURVES
Fig.1 Typical Hfe vs Collector Current
Fig.2 Typical Vbe vs Collector Current
Fig.3 Typical Vce(sat) vs Collector Current
Fig.4 Typical Vbe(sat) vs Collector Current
Fig.5 Typical Capacitances vs Reverse Voltage
September 1,2015-REV.01
Page 3
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