SUD50P10-43L
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= - 10 V
R
DS(on)
() at V
GS
= - 4.5 V
I
D
(A)
Configuration
- 100
0.033
0.036
- 40
Single
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FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
- 100
± 20
- 40
- 22
- 50
- 150
- 44
96
136
45
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
1.1
UNIT
°C/W
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SUD50P10-43L
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 7.7 A, V
GS
= 0 V
V
DD
= - 50 V, R
L
= 6.49
I
D
- 7.7 A, V
GEN
= - 10 V, R
g
= 1.0
f = 1 MHz
V
GS
= - 10 V
V
DS
= - 50V, I
D
= - 9.2 A
V
GS
= 0 V
V
DS
= - 25 V, f = 1 MHz
-
-
-
-
-
-
1.5
-
-
-
-
-
-
4433
301
208
96
8.4
23.5
3.13
11
11
78
15
-
- 0.8
g
fs
V
DS
= - 100 V
V
DS
= - 100 V, T
J
= 125 °C
V
DS
= - 100 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 9.2 A
I
D
= - 9.2 A, T
J
= 125 °C
I
D
= - 9.2 A, T
J
= 175 °C
I
D
= - 7.7 A
- 100
- 1.0
-
-
-
-
- 30
-
-
-
-
-
-
-
-
-
-
-
-
0.033
0.065
0.081
0.037
35
SYMBOL
TEST CONDITIONS
MIN.
TYP.
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MAX.
-
-2.5
± 100
-1
- 50
- 250
-
-
-
-
-
-
-
-
-
144
-
-
4.7
17
17
117
23
- 150
- 1.5
UNIT
V
nA
μA
A
V
DS
= - 15 V, I
D
= - 9.2 A
S
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
b
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
SUD50P10-43L
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 4 V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
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40
32
24
24
16
16
T
C
= 25
°C
8
V
GS
= 3 V
8
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
7
8
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10
100
Transfer Characteristics
8
80
T
C
= - 55
°C
T
C
= 25
°C
6
T
C
= 25
°C
4
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
60
T
C
= 125
°C
40
2
T
C
= 125
°C
0
0
2
4
6
8
10
20
T
C
= - 55
°C
0
0
10
20
30
40
50
V
GS
-
Gate-to-Source
Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
0.10
7000
6000
0.08
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
5000
4000
3000
2000
1000
0.00
0
8
16
24
32
40
0
0
20
Transconductance
C
iss
0.06
0.04
V
GS
= 4.5 V
0.02
V
GS
= 10 V
C
oss
C
rss
40
60
80
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
E-mail：China@VBsemi TEL:86-755-83251052
SUD50P10-43L
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
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2.5
I
D
= 9.2 A
2.0
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 9.2 A
V
DS
= 50 V
6
1.5
V
GS
= 4.5 V
4
1.0
2
0
0
10
20
30
40
50
60
70
80
90
100
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
0.25
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
0.20
R
DS(on)
- On-Resistance (Ω)
0.15
0.1
T
J
= 25
°C
0.01
0.10
T
J
= 150
°C
0.05
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
1.1
- 105
On-Resistance vs. Gate-to-Source Voltage
0.8
V
GS(th)
Variance (V)
I
D
= 250 μA
0.5
I
D
= 5 mA
0.2
V
DS
- Drain-to-Source Voltage (V)
- 110
I
D
= 10 mA
- 115
- 120
- 125
- 0.1
- 130
- 0.4
- 50 - 25
0
25
50
75
100
125
150
175
- 135
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
SUD50P10-43L
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100
I
D
- Drain Current (A)
100 μs
10
1 ms
10 ms
100 ms
1
s,10 s,
DC
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1
Limited by R
DS(on)
*
0.1
T
C
= 25
°C
Single
Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Du
ration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
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