d. Maximum under steady state conditions is 166 °C/W.
E-mail：China@VBsemi TEL:86-755-83251052
1
AO3401A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.3 A, V
GS
½0
V
- 0.8
15
7
8
7
T
C
= 25 °C
- 2.1
- 80
- 1.2
23
14
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 3.5
I
D
- 4.3 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 15 V, R
L
= 3.5
I
D
- 4.3 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
1.5
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5.4 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 5.4 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
1295
150
130
24
11.4
3.4
3.8
7.7
13
4
38
6
28
16
30
10
15.4
20
8
57
12
42
24
45
20
36
17
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
=-
10 V, I
D
= -
4.4
A
V
GS
=-
6 V, I
D
= -
4
A
V
GS
=-
4.5 V, I
D
= -
3.6
A
V
DS
= - 15 V, I
D
= -
3.4
A
- 2.5
0.046
0.049
0.0
54
18
0.0
55
0.058
0.0
63
- 0.5
- 30
- 19
4
- 2.0
± 100
-1
-5
Symbol
Test Conditions
Min.
Typ.
Max.
www.VBsemi.tw
Unit
V
mV/°C
V
nA
µA
A
S
pF
nC
ns
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
2
AO3401A
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 5 V
40
www.VBsemi.tw
2
1.5
I
D
- Drain Current (A)
30
V
GS
= 4 V
20
I
D
- Drain Current (A)
V
GS
= 4.5 V
1
T
C
= 25
°C
10
V
GS
= 3 V
0.5
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
0.6
1.2
1.8
2.4
3
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.08
1800
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.06
C - Capacitance (pF)
V
GS
= 4.5 V
V
GS
= 6 V
1350
C
iss
900
0.04
V
GS
= 10 V
0.0
2
450
C
oss
C
rss
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 5.4 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 8 V
Capacitance
1.5
I
D
= 5.4 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V, 6 V
1.3
V
GS
= 4.5 V
1.1
4
V
DS
= 24 V
2
0.9
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
3
AO3401A
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.080
I
D
= 5.4 A
www.VBsemi.tw
10
T
J
= 150
°C
T
J
= 25
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.060
0.040
T
J
= 125
°C
T
J
= 25
°C
1
0.020
0.1
0.0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
0.000
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2
On-Resistance vs. Gate-to-Source Voltage
10
I
D
= 250 μA
8
1.75
Power (W)
V
GS(th)
(V)
6
1.5
4
1.25
2
T
A
= 25 °C
1
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
10
5
Limited by R
DS(on)
*
100 μs
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
100 ms
10s,
1 s
DC
0.01
T
A
= 25
°C
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
BVDSS Limited
Safe Operating Area, Junction-to-Ambient
E-mail：China@VBsemi TEL:86-755-83251052
4
AO3401A
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5.8
www.VBsemi.tw
4.6
I
D
- Drain Current (A)
3.4
2.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
3.1
1.0
2.48
0.8
Power (W)
Power (W)
1.86
0.5
1.24
0.3
0.62
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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