2N7002K-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Acqire quality system certificate : TS16949
•
AEC-Q101 qualified
•
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
SOT-23
Unit
：
inch(mm)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : K72
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D ra i n- S o urc e Vo lta g e
G a t e -S o ur c e Vo lt a g e
C o nt i nuo us D ra i n C ur re nt
P uls e d D ra i n C urre nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
,T
S TG
R
θ
JA
Limit
60
+20
300
2000
350
210
-5 5 to + 1 5 0
357
Uni ts
V
V
mA
mA
mW
O
M a xi mum P o we r D i s s i p a t i o n
O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 29,2010-REV.02
PAGE . 1
2N7002K-AU
ELECTRICALCHARACTERISTICS
P a ra me te r
S t a ti c
D ra i n-S o urc e B re a k d o wn Vo lta g e
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S t a t e Re s i s ta nc e
D ra i n-S o urc e On-S t a t e Re s i s ta nc e
Ze ro Ga t e Vo lt a g e D ra i n C ur re nt
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha rg e
Tur n-On Ti me
Tur n-Off Ti me
Inp ut C a p a c i ta nc e
Out p ut C a p a c i t a nc e
Re ve rs e Tra ns fe r C a p a c i ta nc e
S o ur c e -D ra i n D i o d e
D i o d e F o rwa rd Vo lta g e
C o nti nuo us D i o d e F o rwa r d C urr e nt
P uls e D i o d e F o r wa rd C ur re nt
V
SD
I
S
I
S M
I
S
=200mA , V
GS
=0V
-
-
-
-
-
0.82
-
-
1.3
300
2000
V
mA
mA
Q
g
t
on
t
off
C
i ss
C
oss
C
rss
V
D S
= 2 5 V , V
GS
= 0 V
f= 1 .0 M H
Z
V
D S
= 1 5 V, I
D
= 2 0 0 m A
V
GS
=5V
V
DD
=30V , R
L
=150Ω
I
D
=200mA , V
GEN
=10V
R
G
=10Ω
-
-
-
-
-
-
-
-
-
-
-
-
0 .8
20
ns
40
35
10
5
pF
nC
B V
DSS
V
G S ( th)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
GS S
g
fS
V
G S
= 0 V , I
D
= 1 0
μ
A
V
D S
= V
GS
, I
D
= 2 5 0
μ
A
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V
DS
=60V , V
GS
=0V
V
GS
= + 2 0 V , V
D S
= 0 V
V
D S
= 1 5 V , I
D
= 2 5 0 mA
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
2 .5
4 .0
Ω
3.0
1
+10
-
μA
μA
mS
V
V
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
October 29,2010-REV.02
PAGE . 2
2N7002K-AU
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
1.2
O
I
D
-
Drain-to-Source Current
(A)
1
0.8
0.6
0.4
0.2
0
0
1
2
3
I
D
-
Drain Source Current
(A)
V
GS
= 6.0~10V
1.2
5.0V
1
0.8
0.6
0.4
0.2
0
0
V
DS
=10V
4.0V
3.0V
4
5
25
o
C
1
2
3
4
5
6
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
5
5
FIG.2- Transfer Characteristic
R
DS(ON)
- On-Resistance
(
W
)
R
DS(ON)
-
On-Resistance
(
W
)
4
3
2
1
0
V
GS
= 4.5V
4
3
2
1
0
I
D
=200mA
I
D
=500mA
V
GS
=10V
0
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8
9
10
I
D
-
Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
R
DS(ON)
- On-Resistance(Normalized)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
FIG.4- On Resistance vs Gate to Source Voltage
V
GS
=10V
I
D
=500mA
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
FIG.5- On Resistance vs Junction Temperature
October 29,2010-REV.02
PAGE . 3
2N7002K-AU
10
Qg
V
GS
- Gate-to-Source Voltage (V)
Vgs
8
6
4
2
0
0
V
DS=
10V
I
D
=250mA
Vgs(th)
Qg(th)
Qgs
Qsw
Qgd
Qg
0.2
0.4
0.6
0.8
1
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Th r esh o l d Vo l tag e (NORMA L IZED)
Fig.7 - Gate Charge
BV
DSS
- Breakdown Voltage (V)
88
86
84
82
80
78
76
74
72
-50
-25
0
25
50
75
100
o
1.2
1.1
1
0.9
0.8
0.7
-50
I
D
=250
m
A
ID = 250
m
A
-25
0
25
50
75
100
125
150
125
150
T
J
- Junction Temperature ( C)
T
J
- Junction Temperature ( C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
10
V
GS
= 0V
C - Capacitance (pF)
70
60
50
40
30
Ciss
f = 1MHz
V
GS
= 0V
I
S
- Source Current (A)
1
T
J
= 125
o
C
0.1
-55
o
C
20
10
0
0
Crss
5
10
15
20
25
Coss
25
o
C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
- Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
Fig.11 - Capacitance vs Drain to Source Voltage
October 29,2010-REV.02
PAGE . 4
2N7002K-AU
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
October 29,2010-REV.02
0.078
(2.00)
PAGE . 5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
