SS32B THRU SS310B
肖特基二极管
Schottky Rectifier
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
M ounting P ad Layout
0.069
(1.76)
0.1 07
(2 .72)
0 .08 1(2 .072)
.0 12(0.31)
.0 06(0.15)
0 .228
(5.8 0)
●
I
o
3.0A
●
V
RRM
20V-100V
●
耐正向浪涌电流½力高
High surge current capability
●
封装:模压塑料
Cases: Molded plastic
DO-214AA(SMB)
.0 85(2.15)
.0 73(1.85)
.1 87(4.75)
.1 67(4.25)
.1 03(2.61)
.0 78(1.99)
.056 (1.4 1)
.035 (0.9 0)
.0 08(0.20)
.0 04(0.10)
.220 (5.5 9)
.205 (5.2 1)
.155 (3.9 4)
.130 (3.3 0)
■用途
Applications
●整流用
Rectifier
D im ensions in inches and (m illim eters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
符号
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
单½
Unit
V
A
测试条件
Test Conditions
正弦半波60Hz,
电阻负½½,
TL(Fig.1)
60HZ Half-sine wave, Resistance
load, TL(Fig.1)
正弦半波60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
-55~+125
SS3
2B
20
3B
30
4B
40
5B
50
3.0
6B
60
9B
90
10B
100
A
℃
℃
100
-55~+150
-55 ~ +150
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向漏电流
Peak Reverse Current
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
F
I
RRM1
I
RRM2
R
θ
J-A
单½
Unit
V
mA
测试条件
Test Condition
I
F
=3.0A
V
RM
=V
RRM
Ta =25℃
Ta =100℃
SS3
2B
3B
0.50
0.5
10
55
1)
4B
5B
6B
9B
10B
0.85
0.1
0.70
5.0
℃
/W
R
θ
J-L
结和环境之间
Between junction and ambient
结和终端之间
Between junction and terminal
17
1)
备注:Notes:
1)
热阻从结到环境及从结到引线,在电路板的
0.6" x 0.6" (16毫米 x 16毫米)铜垫片区
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper
pad areas
Document Number 0231
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SS32B THRU SS310B
■特性曲线
(典型)
Characteristics(Typical)
图
1
:正向电流降额曲线
FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
图
2
:最大正向浪涌冲击耐受力
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
IFSM(A)
150
3.0
SS32-SS34
2.5
SS35-SS310
130
2.0
8.3
毫秒正弦半波
8.3ms Single Half Sine Wave
JEDEC Method
110
1.5
1.0
90
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.6"×0.6"
(16mm×16mm)Copper Pad Areas
0
25
50
75
100
125
150
TL(
℃
)
70
0
50
1
2
10
20
周波数
100
Number of Cycles
图
3:
典型正向特性曲线
FIG.3: TYPICAL FORWARD CHARACTERISTICS
IR(mA)
IF(A)
100
TJ=25
℃
Pulse width=300us
1% Duty Cycle
10
图4:典型反向特性曲线
FIG.4
:
TYPICAL REVERSE CHARACTERISTICS
100
SS32-SS34
SS35-SS310
10
Tj=75
℃
1.0
1.0
Tj=75
℃
0.1
SS32B-SS34B
SS35B-SS36B
SS39B-SS310B
0.1
0.01
Tj=25
℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
0.001
0
20
40
60
80
100
Voltage(%)
Document Number 0231
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com